FAP-450

更新时间： 2024-01-16 18:56:12

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
3页	224K
描述
N-channel MOS-FET(500V, 0,38ヘ, 14A, 190W)

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中文翻译

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数据手册
替代型号

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FAP-450 数据手册

N-channel MOS-FET

FAP-450

FAP-IIS Series

500V 0,38W 14A 190W

> Features

> Outline Drawing

- High Speed Switching

- Low On-Resistance

- No Secondary Breakdown

- Low Driving Power

- High Voltage

V_GS= ± 30V Guarantee

- Repetitive Avalanche Rated

> Applications

- Switching Regulators

- UPS

- DC-DC converters

- General Purpose Power Amplifier

> Maximum Ratings and Characteristics

> Equivalent Circuit

- Absolute Maximum Ratings (TC=25°C), unless otherwise specified

Item

Symbol

Rating

Unit

Drain-Source-Voltage

Continous Drain Current

Pulsed Drain Current

Gate-Source-Voltage

Avalanche Current

500

D(puls)

±30

14^*2

760^*1

Maximum Avalanche Energy

Max. Power Dissipation

Operating and Storage Temperature Range

°C

190

150

-55 ~ +150

stg

*1) V_CC= 50V; L = 7mH; I_AS= 14A; R_G= 50 W; Starting T_ch= 25°C (See Fig. 1 & 2)

*2) Repetitive Rating : Pulse Width limited by max. Channel Temperature

Electrical Characteristics (T_C=25°C), unless otherwise specified

Item

Symbol

DSS

Test conditions

V_GS=0V

Min.

500

3,0

Typ.

3,0

Max.

Unit

µA

I_D=1mA

Drain-Source Breakdown-Voltage

Gate Threshhold Voltage

Zero Gate Voltage Drain Current

I_D=250µA

V_DS=500V

V_GS=0V

V_GS=±30V

I_D=8A

V_DS=V_GS

4,0

1,0

100

0,38

GS(th)

T_ch=25°C

T_ch=125°C

V_DS=0V

V_GS=10V

V_DS=25V

DSS

Gate Source Leakage Current

Drain Source On-State Resistance

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On-Time t_on(t_on=t_d(on)+t_r)

0,32

2200

330

140

130

GSS

DS(on)

I_D=8A

V_DS=25V

V_GS=0V

f=1MHz

V_CC=250V

V_GS=10V

R_G= 6,1W

R_D= 20W

iss

oss

rss

d(on)

Turn-Off-Time t_off(t_on=t_d(off)+t_f)

d(off)

T_ch=25°C

V_CC=400V

Avalanche Capability

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Diode Forward On-Voltage

Reverse Recovery Time

Reverse Recovery Charge

L = 100µH

iss

170

V_GS=10V

I_D= 14A

I_F=2xI_DRV_GS=0V T_ch=25°C

I_F=I_DRV_GS=0V

oss

rss

1,0

700

9,0

1,5

µC

-dI_F/dt=100A/µs T_ch=25°C

Thermal Characteristics

Item

Symbol

Test conditions

channel to ambient

channel to case

Min.

Typ.

Max.

0,65

Unit

°C/W

Thermal Resistance

th(ch-a)

th(ch-c)

Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

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FAP-450 替代型号

型号	品牌	替代类型	描述	数据表
IRFP450	SAMSUNG	功能相似	N-CHANNEL POWER MOSFETS
2SK678	TOSHIBA	功能相似	2SK678

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