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FAN5026MTCX

更新时间： 2024-02-05 19:43:13

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		开关光电二极管双倍数据速率控制器
页数	文件大小	规格书
17页	192K
描述
Dual DDR/Dual-output PWM Controller

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技术参数
数据手册

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FAN5026MTCX 技术参数

生命周期：	Obsolete	零件包装代码：	TSSOP
包装说明：	TSSOP,	针数：	28
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.39.00.01	风险等级：	5.2
模拟集成电路 - 其他类型：	DUAL SWITCHING CONTROLLER	控制模式：	CURRENT-MODE
控制技术：	PULSE WIDTH MODULATION	最大输入电压：	5.25 V
最小输入电压：	4.75 V	标称输入电压：	5 V
JESD-30 代码：	R-PDSO-G28	JESD-609代码：	e3
长度：	9.7 mm	功能数量：	1
端子数量：	28	最高工作温度：	85 °C
最低工作温度：	-40 °C	封装主体材料：	PLASTIC/EPOXY
封装代码：	TSSOP	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	认证状态：	Not Qualified
座面最大高度：	1.2 mm	表面贴装：	YES
切换器配置：	PUSH-PULL	最大切换频率：	345 kHz
温度等级：	INDUSTRIAL	端子面层：	MATTE TIN
端子形式：	GULL WING	端子节距：	0.65 mm
端子位置：	DUAL	宽度：	4.4 mm
Base Number Matches：	1

FAN5026MTCX 数据手册

www.fairchildsemi.com

FAN5026

Dual DDR/Dual-output PWM Controller

Features

General Description

• Highly ﬂexible dual synchronous switching PWM

controller includes modes for:

The FAN5026 PWM controller provides high efﬁciency and

regulation for two output voltages adjustable in the range

from 0.9V to 5.5V that are required to power I/O, chip-sets,

and memory banks in high-performance computers, set top

boxes, and VGA cards. Synchronous rectiﬁcation contributes

to high efﬁciency over a wide range of loads. Efﬁciency is

even further enhanced by using MOSFET’s R_DS(ON)as a

current sense component.

– DDR mode with in-phase operation for reduced

channel interference

– 90° phase shifted two-stage DDR Mode for reduced

input ripple

– Dual Independent regulators 180° phase shifted

• Complete DDR Memory power solution

– VTT Tracks VDDQ/2

– VDDQ/2 Buffered Reference Output

• Lossless current sensing on low-side MOSFET or

Precision current sensing using sense resistor

• VCC Under-voltage Lockout

• Wide power input range: 3 to 16V

• Excellent dynamic response with Voltage Feed-Forward

and Average Current Mode control

• Power-Good Signal

Feed-forward ramp modulation, average current mode

control scheme, and internal feedback compensation provide

fast response to load transients. Out-of-phase operation with

180 degree phase shift reduces input current ripple. The

controller can be transformed into a complete DDR memory

power supply solution by activating a designated pin. In

DDR mode of operation one of the channels tracks the

output voltage of another channel and provides output

current sink and source capability — features essential for

proper powering of DDR chips. The buffered reference

voltage required by this type of memory is also provided.

The FAN5026 monitors these outputs and generates separate

PGx (power good) signals when the soft-start is completed

and the output is within 10ꢀ of its set point. A built-in

over-voltage protection prevents the output voltage from

going above 120ꢀ of the set point. Normal operation is

automatically restored when the over-voltage conditions go

away. Under-voltage protection latches the chip off when

either output drops below 75ꢀ of its set value after the

soft-start sequence for this output is completed. An adjust-

able over-current function monitors the output current by

sensing the voltage drop across the lower MOSFET.

If precision current-sensing is required, an external current-

sense resistor may optionally be used.

• Also supports DDR-II and HSTL

• TSSOP28 package

Applications

• DDR V_DDQand V_TTvoltage generation

• Desktop Computer

• Graphics cards

REV. 1.0.2b 9/2/03

12 3 4 5 6 7...17

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