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FAN3226C PDF预览

FAN3226C

更新时间: 2024-02-03 02:50:13
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 驱动器栅极栅极驱动
页数 文件大小 规格书
12页 459K
描述
Application Review and Comparative Evaluation of Low-Side Gate Drivers

FAN3226C 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.31.00.01风险等级:4.29
高边驱动器:NO接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:5 mm湿度敏感等级:1
功能数量:1端子数量:8
最高工作温度:125 °C最低工作温度:-40 °C
标称输出峰值电流:3 A封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified座面最大高度:1.75 mm
最大供电电压:18 V最小供电电压:4.5 V
标称供电电压:12 V表面贴装:YES
温度等级:AUTOMOTIVE端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL断开时间:0.022 µs
接通时间:0.017 µs宽度:4 mm
Base Number Matches:1

FAN3226C 数据手册

 浏览型号FAN3226C的Datasheet PDF文件第2页浏览型号FAN3226C的Datasheet PDF文件第3页浏览型号FAN3226C的Datasheet PDF文件第4页浏览型号FAN3226C的Datasheet PDF文件第5页浏览型号FAN3226C的Datasheet PDF文件第6页浏览型号FAN3226C的Datasheet PDF文件第7页 
www.fairchildsemi.com  
AN-6069  
Application Review and Comparative Evaluation  
of Low-Side Gate Drivers  
Summary  
Low-side drivers are also used to drive transformers, which  
Power MOSFETs require a gate drive circuit to translate the  
on/off signals from an analog or digital controller into the  
power signals necessary to control the MOSFET. This paper  
provides details of MOSFET switching action in  
provide isolated MOSFET gate drive circuits or  
communication across the power supply isolation boundary.  
In these applications, a driver is required to handle concerns  
specific to transformer drive, discussed later.  
applications with clamped inductive load, when used as a  
secondary synchronous rectifier, and driving pulse/gate  
drive transformers. Potential driver solutions, including  
discrete and integrated driver designs, are discussed.  
MOSFET driver datasheet current ratings are examined and  
circuits are presented to assist with evaluating the  
performance of drivers on the lab bench.  
Low-side drivers may seem a mundane topic; several papers  
have been written on the subject. Though often presented as  
an ideal voltage source that can source or sink current  
determined by the circuit’s series impedance, the current  
available from a driver is, in fact, limited by the discrete or  
integrated circuit design. This note reviews the basic  
requirements of drivers from an application viewpoint, then  
investigates methods for testing and evaluating the current  
capability of drivers on the lab bench.  
Introduction  
In many low-to-medium power applications, a low-side  
(ground referenced) MOSFET is driven by the output pin of  
a PWM control IC to switch an inductive load. This solution  
is acceptable if the PWM output circuitry can drive the  
MOSFET with acceptable switching times without  
dissipating excessive power. As the system power  
requirements grow, the number of switches and associated  
drive circuitry increases. As control circuit complexity  
increases, it is becoming more common for IC  
Clamped Inductive Switching  
The simplified boost converter in Figure 1 provides the  
schematic for a typical power circuit with a clamped  
inductive load. When the MOSFET Q is turned on, the input  
voltage VIN is applied across inductor L and the current  
ramps up in a linear fashion to store energy in the inductor.  
When the MOSFET turns off, the inductor current flows  
through diode D1 and delivers energy to COUT and RLOAD at  
voltage VDC. The inductor is assumed large enough to  
maintain current constant during the switching interval.  
manufacturers to omit onboard drivers because of grounding  
and noise problems.  
Synchronous rectifiers (SRs) are increasingly used to replace  
standard rectifiers when high efficiency and increased power  
density are important. It is common for isolated power  
stages delivering tens of amps to parallel two or more low-  
resistance MOSFETs in each rectifying leg, and these  
devices require current pulses reaching several amps to  
switch the devices in the sub-100ns timeframe desired.  
External drivers can provide these high-current pulses and a  
means to implement timing to eliminate shoot-through and  
optimize efficiency to control the SR operation. In addition,  
drivers can translate logic control voltages to the most  
effective MOSFET drive level.  
VIN  
VDC  
L
D1  
VDD  
RLOAD  
CBYP  
COUT  
RG  
Q
VOUT  
IG  
Figure 1. Simplified Boost Converter  
© 2007 Fairchild Semiconductor Corporation  
Rev. 1.0.3 • 1/6/10  
www.fairchildsemi.com  

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