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2N7002A PDF预览

2N7002A

更新时间: 2024-02-16 13:57:48
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
7页 95K
描述
N-Channel Enhancement Mode Field Effect Transistor

2N7002A 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.55Is Samacsys:N
湿度敏感等级:1峰值回流温度(摄氏度):260
处于峰值回流温度下的最长时间:10Base Number Matches:1

2N7002A 数据手册

 浏览型号2N7002A的Datasheet PDF文件第2页浏览型号2N7002A的Datasheet PDF文件第3页浏览型号2N7002A的Datasheet PDF文件第4页浏览型号2N7002A的Datasheet PDF文件第5页浏览型号2N7002A的Datasheet PDF文件第6页浏览型号2N7002A的Datasheet PDF文件第7页 
November 1995  
2N7000 / 2N7002 / NDS7002A  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
High density cell design for low RDS(ON)  
.
These N-Channel enhancement mode field effect transistors  
are produced using Fairchild's proprietary, high cell density,  
DMOS technology. These products have been designed to  
minimize on-state resistance while provide rugged, reliable,  
and fast switching performance. They can be used in most  
applications requiring up to 400mA DC and can deliver  
pulsed currents up to 2A. These products are particularly  
suited for low voltage, low current applications such as small  
servo motor control, power MOSFET gate drivers, and other  
switching applications.  
Voltage controlled small signal switch.  
Rugged and reliable.  
High saturation current capability.  
___________________________________________________________________________________________  
D
G
D
G
S
TO-92  
2N7000  
S
(TO-236AB)  
2N7002/NDS7002A  
Absolute Maximum Ratings  
TA = 25°C unless otherwise noted  
2N7000  
2N7002  
60  
NDS7002A  
Symbol  
Parameter  
Units  
VDSS  
Drain-Source Voltage  
V
V
60  
VDGR  
VGSS  
Drain-Gate Voltage (RGS < 1 MW)  
Gate-Source Voltage - Continuous  
V
±20  
- Non Repetitive (tp < 50µs)  
±40  
115  
800  
200  
1.6  
ID  
Maximum Drain Current - Continuous  
- Pulsed  
200  
500  
400  
3.2  
280  
1500  
mA  
PD  
Maximum Power Dissipation  
Derated above 25oC  
300  
mW  
mW/°C  
°C  
2.4  
TJ,TSTG  
TL  
Operating and Storage Temperature Range  
-55 to 150  
-65 to 150  
Maximum Lead Temperature for Soldering  
Purposes, 1/16" from Case for 10 Seconds  
300  
625  
°C  
THERMAL CHARACTERISTICS  
Thermal Resistance, Junction-to-Ambient  
312.5  
417  
°C/W  
R
JA  
q
© 1997 Fairchild Semiconductor Corporation  
2N7000.SAM Rev. A1  

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