2N5639

更新时间： 2024-01-25 23:09:33

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体开关小信号场效应晶体管
页数	文件大小	规格书
3页	28K
描述
N-Channel Switch

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技术参数
数据手册

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2N5639 技术参数

生命周期：	Obsolete	包装说明：	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code：	unknown	风险等级：	5.67
配置：	SINGLE	最大漏源导通电阻：	60 Ω
FET 技术：	JUNCTION	最大反馈电容 (Crss)：	4 pF
JEDEC-95代码：	TO-226AA	JESD-30 代码：	O-PBCY-T3
元件数量：	1	端子数量：	3
工作模式：	DEPLETION MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	CYLINDRICAL
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	BOTTOM	晶体管元件材料：	SILICON
Base Number Matches：	1

2N5639 数据手册

2N5639

N-Channel Switch

•

This device is designed for low level analog switchng, sample and hold

circuits and chopper stabilized amplifiers.

•

Sourced from process 51.

TO-92

1. Drain 2. Source 3. Gate

Absolute Maximum Ratings * ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

-30

°C

T , T

Operating and Storage Junction Temperature Range

-55 ~ +150

STG

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1. These ratings are based on a maximum junction temperature of 150 degrees C.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Typ.

Max. Units

Off Characteristics

Gate-Source Breakdown Voltage

Gate Reverse Current

= 0, I = -10µA

-30

(BR)GSS

GSS

= -15V, V = 0

-1.0

1.0

Drain Cutoff Leakage Current

= 12V, V = 15V

D(off)

On Characteristics

Zero-Gate Voltage Drain Current *

Drain-Source On Resistance

= 20V, I = 0

DSS

= 0V, I = 1.0mA

Ω

DS(on)

Small Signal Characteristics

Drain-Source On Resistance

Input Capacitance

= V = 0, f = 1.0kHz

Ω

ds(on)

= 0, V = 12V, f = 1.0MHz

iss

rss

Reverse Transfer Capacitance

= 0V, V = 12V, f = 1.0MHz

4.0

Switching Characteristics

Trun On Delay Time

Rise Time

= 10V, V = 0

GS(on)

6.0

8.0

d(on)

= -12, I

= 12mA

GS(off)

D(on)

= 50Ω

Trun Off Delay Time

d(off)

Fall Time

* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1.0%

Thermal Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Max.

Units

mW/°C

Total Device Dissipation

Derate above 25°C

350

2.8

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

125

357

°C/W

θJC

θJA

°C/W

Rev. A, July 2003

12 3

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