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2N5461_D26Z PDF预览

2N5461_D26Z

更新时间: 2024-01-15 16:33:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器小信号场效应晶体管
页数 文件大小 规格书
5页 120K
描述
P-Channel General Purpose Amplifier

2N5461_D26Z 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantHTS代码:8541.21.00.95
风险等级:5.01配置:SINGLE
FET 技术:JUNCTION最大反馈电容 (Crss):2 pF
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):0.31 W认证状态:Not Qualified
子类别:FET General Purpose Small Signal表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

2N5461_D26Z 数据手册

 浏览型号2N5461_D26Z的Datasheet PDF文件第2页浏览型号2N5461_D26Z的Datasheet PDF文件第3页浏览型号2N5461_D26Z的Datasheet PDF文件第4页浏览型号2N5461_D26Z的Datasheet PDF文件第5页 
MMBF5460  
MMBF5461  
MMBF5462  
2N5460  
2N5461  
2N5462  
G
S
TO-92  
D
G
SOT-23  
Mark: 6E / 61U / 61V  
NOTE: Source & Drain  
are interchangeable  
S
D
P-Channel General Purpose Amplifier  
This device is designed primarily for low level audio and general  
purpose applications with high impedance signal sources. Sourced  
from Process 89.  
Absolute Maximum Ratings*  
TA= 25°C unless otherwise noted  
-
Symbol  
Parameter  
Value  
Units  
VDG  
Drain-Gate Voltage  
Gate-Source Voltage  
Forward Gate Current  
- 40  
40  
V
V
VGS  
IGF  
10  
mA  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
TJ ,Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA= 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N5460-5462  
*MMBF5460-5462  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
350  
2.8  
125  
225  
1.8  
mW  
mW/°C  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction to Ambient  
357  
556  
°C/W  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
2N5460/5461/5462/MMBF5460/5461/5462, Rev A  
2001 Fairchild Semiconductor Corporation  

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