5秒后页面跳转
2KBP01 PDF预览

2KBP01

更新时间: 2024-02-29 07:11:34
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
3页 43K
描述
2.0 Ampere Bridge Rectifiers

2KBP01 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:S-PDIP-W4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:8.04
其他特性:LEAKAGE CURRENT IS NOT AT 25 DEG C配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:S-PDIP-W4最大非重复峰值正向电流:63 A
元件数量:4相数:1
端子数量:4最大输出电流:2 A
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:IN-LINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:100 V
表面贴装:NO端子形式:WIRE
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

2KBP01 数据手册

 浏览型号2KBP01的Datasheet PDF文件第2页浏览型号2KBP01的Datasheet PDF文件第3页 
2KBP005M/3N253 - 2KBP10M/3N259  
Features  
Surge overload rating: 60 amperes  
peak.  
Reliable low cost construction utilizing  
molded plastic technique.  
~
~
-
UL certified, UL #E111753.  
+
KBPM  
Bridge Rectifiers  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Value  
005M 01M 02M 04M 06M 08M 10M  
Symbol  
Parameter  
Units  
253  
50  
254 255 256 257 258  
100 200 400 600 800 1000  
70 140 280 420 560 700  
259  
VRRM  
VRMS  
VR  
Maximum Repetitive Reverse Voltage  
Maximum RMS Bridge Input Voltage  
V
V
V
35  
DC Reverse Voltage  
(Rated VR)  
50  
100 200 400 600 800 1000  
IF(AV)  
Average Rectified Forward Current,  
@ TA = 50°C  
2.0  
A
IFSM  
Non-repetitive Peak Forward Surge Current  
60  
A
Storage Temperature Range  
-55 to +165  
-55 to +165  
°C  
°C  
Tstg  
TJ  
Operating Junction Temperature  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
PD  
Power Dissipation  
Thermal Resistance, Junction to Ambient,* per leg  
4.7  
30  
W
RθJA  
°C/W  
*Device mounted on PCB with 0.47 x 0.47" (12 x 12 mm).  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Device  
Units  
VF  
IR  
Forward Voltage, per bridge @ 3.14 A  
Reverse Current, total bridge @ rated VR  
1.1  
V
5.0  
500  
A
A
µ
µ
T = 25 C  
°
A
T = 125 C  
°
A
I2t rating for fusing  
t < 8.35 ms  
15  
25  
A2s  
CT  
Total Capacitance, per leg  
VR = 4.0 V, f = 1.0 MHz  
pF  
2001 Fairchild Semiconductor Corporation  
2KBP005/3N253-2KBP10/3N259, Rev.  
D

与2KBP01相关器件

型号 品牌 描述 获取价格 数据表
2KBP01G FUJI 2 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIER

获取价格

2KBP01G MIC SINGLE-PHASE GLASS PASSIVATED BRIDGE RECTIFIER

获取价格

2KBP01G LGE 2A Glass Passivated Silicon Bridge Rectifier

获取价格

2KBP01L3 VISHAY Bridge Rectifier Diode, 1 Phase, 2A, 100V V(RRM), Silicon

获取价格

2KBP01L3PBF VISHAY Bridge Rectifier Diode, 1 Phase, 2A, 100V V(RRM), Silicon

获取价格

2KBP01L5PBF VISHAY Bridge Rectifier Diode, 1 Phase, 2A, 100V V(RRM), Silicon

获取价格