FA57SA50LC

更新时间： 2024-09-22 22:38:51

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	133K
描述
HEXFET Power MOSFET

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数据手册

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FA57SA50LC 数据手册

PD - 91650A

FA57SA50LC

HEXFET^®Power MOSFET

l Fully Isolated Package

l Easy to Use and Parallel

V_DSS= 500V

Low On-Resistance

l Dynamic dv/dt Rating

l Fully Avalanche Rated

R_DS(on)= 0.08Ω

l Simple Drive Requirements

l Low Gate Charge Device

l Low Drain to Case Capacitance

l Low Internal Inductance

I_D= 57A

Description

Third Generation HEXFETs from International Rectifier

provide the designer with the best combination of fast

switching, ruggedized device design, low on-resistance

and cost-effectiveness.

The SOT-227 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 500 watts. The low thermal

resistance of theSOT-227contributetoitswideacceptance

throughout the industry.

SOT-227

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

228

P_D@T_C= 25°C

Power Dissipation

625

W/°C

Linear Derating Factor

5.0

V_GS

E_AS

Gate-to-Source Voltage

± 20

725

Single Pulse Avalanche Energy

Avalanche Current

I_AR

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

62.5

3.0

V/ns

°C

-55 to + 150

T_STG

V_ISO

Storage Temperature Range

Insulation Withstand Voltage (AC-RMS)

Mounting torque, M4 srew

2.5

1.3

N•m

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

0.20

–––

Units

R_θJC

R_θCS

Case-to-Sink, Flat, Greased Surface

0.05

°C/W

www.irf.com

2/1/99

12 3 4 5 6 7 8

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