是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.8 |
最大集电极电流 (IC): | 0.1 A | 最小直流电流增益 (hFE): | 85 |
元件数量: | 1 | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.2 W | 子类别: | BIP General Purpose Small Signal |
表面贴装: | YES | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FA4L4Z | NEC |
获取价格 |
RESISTOR BUILT-IN TYPE NPN TRANSISTOR | |
FA4L4Z-A | RENESAS |
获取价格 |
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN | |
FA4L4Z-A | NEC |
获取价格 |
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN | |
FA4L4Z-AT | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59 | |
FA4L4Z-AT | NEC |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59 | |
FA4L4Z-L | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59 | |
FA4L4Z-L-A | NEC |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59 | |
FA4L4Z-L-AT | NEC |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59 | |
FA4L4Z-T1B-AT | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59 | |
FA4L4Z-T2B | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59 |