FA4L4M

更新时间： 2024-09-20 22:26:43

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号双极晶体管光电二极管
页数	文件大小	规格书
22页	684K
描述
RESISTOR BUILT-IN TYPE NPN TRANSISTOR

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中文翻译

获取价格

技术参数
数据手册

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FA4L4M 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	SC-59, 3 PIN	Reach Compliance Code：	compliant
风险等级：	5.79	Is Samacsys：	N
其他特性：	BUILT IN BIAS RESISTANCE RATIO IS 1	最大集电极电流 (IC)：	0.1 A
集电极-发射极最大电压：	50 V	配置：	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	85	JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e0	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN LEAD	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管元件材料：	SILICON	Base Number Matches：	1

FA4L4M 数据手册

DATA SHEET

^SILICONF^TRA^AN4^Sx^ISx^TOx^R

RESISTOR BUILT-IN TYPE NPN TRANSISTOR

FEATURES

PACKAGE DRAWING (Unit: mm)

• Compact package

• Resistors built-in type

• Complementary to FN4xxx

+0.1

–0.05

0.4

+0.1

–0.06

0.16

Marking

ORDERING INFORMATION

PART NUMBER

0 to 0.1

PACKAGE

SC-59

FA4xxx

+0.1

–0.05

0.3

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

0.4

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

Collector Current (pulse) ^Note

Total Power Dissipation

Junction Temperature

VCBO

V^CEO

V^EBO

I^C

IC(pulse)

P^T

0.1

0.2

°C

1.1 to 1.4

0.95

2.9 ± 0.2

0.95

EQUIVALENT CIRCUIT

PIN CONNECTION

1: Emitter

2: Base

0.2

150

–55 to +150

3: Collector

T^j

T^stg

Storage Temperature

R¹

Note PW ≤ 10 ms, Duty Cycle ≤ 50%

PART NUMBER

FA4A4M

FA4F4M

FA4L4M

FA4L3M

FA4L3N

MARK

AA1

AB1

AC1

AD1

AE1

AF1

AG1

AH1

AJ1

UNIT

kΩ

PART NUMBER

FA4L4L

MARK

AK1

AL1

UNIT

kΩ

10.0

22.0

47.0

4.7

10.0

22.0

47.0

4.7

47.0

10.0

22.0

47.0

2.2

22.0

FA4A4Z

FA4F4Z

AM1

AN1

AP1

AQ1

AR1

AS1

AT1

FA4L4Z

4.7

10.0

FA4F3M

FA4F3P

FA4F3R

FA4A4L

2.2

10.0

47.0

4.7

FA4L3Z

4.7

2.2

FA4A3Q

FA4A4P

1.0

10.0

47.0

2.2

10.0

22.0

10.0

47.0

FA4F4N

FA4L4K

10.0

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

The mark # shows major revised points.

Document No. D16493EJ2V0DS00 (2nd edition)

Date Published February 2003 NS CP(K)

Printed in Japan

2002

12 3 4 5 6 7...22

中文翻译

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与FA4L4M相关器件

型号	品牌	获取价格	描述	数据表
FA4L4M-A	NEC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SC-59,
FA4L4M-AT	NEC	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59
FA4L4M-L	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59
FA4L4M-L-A	NEC	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59
FA4L4M-L-AT	NEC	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59
FA4L4M-T1B	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59
FA4L4M-T1B-A	RENESAS	获取价格	Built-in Resistor Bipolar Transistors, MM, /
FA4L4M-T1B-AT	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59
FA4L4M-T2B	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59
FA4L4M-T2B-AT	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59

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