Datasheet > F605

F605

更新时间： 2024-11-26 17:02:11

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	332K
描述
0.03A, 600V, 0.5W, N Channel, Small Signal MOSFETs

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F605 数据手册

Product Specification

Silicon N-Channel Power MOSFET

FEATURES

F605



N -channel

ESD improved Capability.

Depletion Mode

Dv/dt rated

APPLICATIONS



Line current interrupter in telephone sets



Relay, high speed and line transformer drivers

SOT-23

ORDERING INFORMATION

Type No.

F605

Marking

605

Package Code

SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

V_DSX

V_GS

Parameter

Value

Units

Drain-to-Source voltage

Gate -Source voltage

600

±20

Continuous Drain current

0.030

0.024

I_D

Continuous Drain current Tc=70°C

I_DM

Pulsed Drain current

0.120

5.0

dv/dt^a2

P_D

Peak Diode Recovery dv/dt

V/ns

Power Dissipation

0.5

V_ESD(G-S)

Gate source ESD(HBM-C=100pF,R=1.5kΩ)

300

150，-55 to +150

T_J, T_STG

T_L

Operating Junction and StorageTemperature

Maximum Temperature for Soldering

℃

300

STM0165A: June 2016 [P]

www.gmesemi.com

12 3 4

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