ESMT
F59D1G81LB / F59D1G161LB (2M)
Flash
1 Gbit (128M x 8/ 64M x 16)
1.8V NAND Flash Memory
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V)
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Organization
Reliable CMOS Floating Gate Technology
- ECC Requirement: x8 – 1bit/512Byte,
x16 – 1bit/256Word
- Endurance: 60K Program/Erase Cycles
- Data Retention: 10 Years
Command Register Operation
Automatic Page 0 Read at Power-Up Option
- Boot from NAND support
x8:
- Memory Cell Array: (128M + 4M) x 8bit
- Data Register: (2K + 64) x 8bit
x16:
- Memory Cell Array: (64M + 2M) x 16bit
- Data Register: (1K + 32) x 16bit
Automatic Program and Erase
x8:
- Automatic Memory Download
NOP: 4 cycles
- Page Program: (2K + 64) Byte
- Block Erase: (128K + 4K) Byte
x16:
- Page Program: (1K + 32) Word
- Block Erase: (64K + 2K) Word
Cache Program/Read Operation for High Performance
Program
Cache Read Operation
Copy-Back Operation
EDO mode
Page Read Operation
x8
- Page Size: (2K + 64) Byte (x8)
- Random Read: 25us (Max.)
- Serial Access: 45ns (Min.)
x16
Bad-Block-Protect
One Time Program (OTP) Operation
-Page Size: (1K + 32) Word (x16)
Memory Cell: 1bit/Memory Cell
Fast Write Cycle Time
x8
- Program time: 300us (Typ.)
- Block Erase time: 4ms (Typ.)
Command/Address/Data Multiplexed I/O Port
ORDERING INFORMATION
Product ID
Speed
Package
Comments
x8:
F59D1G81LB -45TG2M
F59D1G81LB -45BG2M
F59D1G81LB-45BCG2M
x16:
45 ns
45 ns
45 ns
48 pin TSOPI
63 ball BGA
67 ball BGA
Pb-free
Pb-free
Pb-free
F59D1G161LB-45TG2M
F59D1G161LB-45BG2M
45 ns
45 ns
48 pin TSOPI
63 ball BGA
Pb-free
Pb-free
Elite Semiconductor Memory Technology Inc.
Publication Date: Aug. 2018
Revision: 1.0 1/53