Datasheet > F59D1G161MA-45TG2L

F59D1G161MA-45TG2L

更新时间： 2024-11-15 02:50:15

品牌	Logo	应用领域
晶豪 - ESMT		/
页数	文件大小	规格书
51页	1546K
描述
1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

F59D1G161MA-45TG2L 数据手册

浏览型号F59D1G161MA-45TG2L的Datasheet PDF文件第2页

浏览型号F59D1G161MA-45TG2L的Datasheet PDF文件第3页

浏览型号F59D1G161MA-45TG2L的Datasheet PDF文件第4页

浏览型号F59D1G161MA-45TG2L的Datasheet PDF文件第5页

浏览型号F59D1G161MA-45TG2L的Datasheet PDF文件第6页

浏览型号F59D1G161MA-45TG2L的Datasheet PDF文件第7页

ESMT

F59D1G81MA / F59D1G161MA (2L)

Flash

1 Gbit (128M x 8/ 64M x 16)

1.8V NAND Flash Memory

FEATURES

Voltage Supply: 1.8V (1.7 V ~ 1.95V)

Organization

x8:

- Memory Cell Array: (128M + 4M) x 8bit

- Data Register: (2K + 64) x 8bit

x16:

- Memory Cell Array: (64M + 2M) x 16bit

- Data Register: (1K + 32) x 16bit

Automatic Program and Erase

Hardware Data Protection

- Program/Erase Lockout During Power Transitions

Reliable CMOS Floating Gate Technology

- ECC Requirement: x8 - 4bit/512Byte,

x16 - 4bit/256Word

- Endurance: 100K Program/Erase Cycles

- Data Retention: 10 Years

Command Register Operation

Automatic Page 0 Read at Power-Up Option

- Boot from NAND support

- Automatic Memory Download

NOP: 4 cycles

Cache Program/Read Operation

Copy-Back Operation

EDO mode

x8:

- Page Program: (2K + 64) Byte

- Block Erase: (128K + 4K) Byte

x16:

- Page Program: (1K + 32) Word

- Block Erase: (64K + 2K) Word

Page Read Operation

- Page Size: (2K + 64) Byte (x8)

Page Size: (1K + 32) Word (x16)

- Random Read: 25us (Max.)

- Serial Access: 45ns (Min.)

Bad-Block-Protect

One Time Program Operation

Memory Cell: 1bit/Memory Cell

Fast Write Cycle Time

- Program time: 350us (Typ.)

- Block Erase time: 3.5ms (Typ.)

Command/Address/Data Multiplexed I/O Port

ORDERING INFORMATION

Product ID

Speed

Package

Comments

x8:

F59D1G81MA -45TG2L

F59D1G81MA -45BG2L

F59D1G81MA -45BCG2L

x16:

45 ns

48 pin TSOPI

63 ball BGA

67 ball BGA

Pb-free

F59D1G161MA -45TG2L

F59D1G161MA -45BG2L

45 ns

48 pin TSOPI

63 ball BGA

Pb-free

Elite Semiconductor Memory Technology Inc.

Publication Date: Jul. 2015

Revision: 1.0 1/51

12 3 4 5 6 7...51

中文翻译

下载PDF

与F59D1G161MA-45TG2L相关器件

型号	品牌	获取价格	描述	数据表
F59D1G161MB-45BG2M	ESMT	获取价格	1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G161MB-45TG2M	ESMT	获取价格	1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81LB	ESMT	获取价格	1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81LB-45BCG2M	ESMT	获取价格	1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81LB-45BG2M	ESMT	获取价格	1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81LB-45TG2M	ESMT	获取价格	1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81MA	ESMT	获取价格	1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81MA-45BCG2L	ESMT	获取价格	1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81MA-45BG2L	ESMT	获取价格	1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81MA-45TG2L	ESMT	获取价格	1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory