5秒后页面跳转
F59D1G161MA-45BG2L PDF预览

F59D1G161MA-45BG2L

更新时间: 2024-01-29 02:13:08
品牌 Logo 应用领域
晶豪 - ESMT /
页数 文件大小 规格书
51页 1546K
描述
1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory

F59D1G161MA-45BG2L 数据手册

 浏览型号F59D1G161MA-45BG2L的Datasheet PDF文件第2页浏览型号F59D1G161MA-45BG2L的Datasheet PDF文件第3页浏览型号F59D1G161MA-45BG2L的Datasheet PDF文件第4页浏览型号F59D1G161MA-45BG2L的Datasheet PDF文件第5页浏览型号F59D1G161MA-45BG2L的Datasheet PDF文件第6页浏览型号F59D1G161MA-45BG2L的Datasheet PDF文件第7页 
ESMT  
F59D1G81MA / F59D1G161MA (2L)  
Flash  
1 Gbit (128M x 8/ 64M x 16)  
1.8V NAND Flash Memory  
FEATURES  
z
z
Voltage Supply: 1.8V (1.7 V ~ 1.95V)  
Organization  
x8:  
- Memory Cell Array: (128M + 4M) x 8bit  
- Data Register: (2K + 64) x 8bit  
x16:  
- Memory Cell Array: (64M + 2M) x 16bit  
- Data Register: (1K + 32) x 16bit  
Automatic Program and Erase  
z
z
Hardware Data Protection  
- Program/Erase Lockout During Power Transitions  
Reliable CMOS Floating Gate Technology  
- ECC Requirement: x8 - 4bit/512Byte,  
x16 - 4bit/256Word  
- Endurance: 100K Program/Erase Cycles  
- Data Retention: 10 Years  
Command Register Operation  
Automatic Page 0 Read at Power-Up Option  
- Boot from NAND support  
- Automatic Memory Download  
NOP: 4 cycles  
Cache Program/Read Operation  
Copy-Back Operation  
EDO mode  
z
z
z
x8:  
- Page Program: (2K + 64) Byte  
- Block Erase: (128K + 4K) Byte  
x16:  
- Page Program: (1K + 32) Word  
- Block Erase: (64K + 2K) Word  
Page Read Operation  
- Page Size: (2K + 64) Byte (x8)  
Page Size: (1K + 32) Word (x16)  
- Random Read: 25us (Max.)  
- Serial Access: 45ns (Min.)  
z
z
z
z
z
z
z
Bad-Block-Protect  
One Time Program Operation  
z
z
Memory Cell: 1bit/Memory Cell  
Fast Write Cycle Time  
- Program time: 350us (Typ.)  
- Block Erase time: 3.5ms (Typ.)  
z
Command/Address/Data Multiplexed I/O Port  
ORDERING INFORMATION  
Product ID  
Speed  
Package  
Comments  
x8:  
F59D1G81MA -45TG2L  
F59D1G81MA -45BG2L  
F59D1G81MA -45BCG2L  
x16:  
45 ns  
45 ns  
45 ns  
48 pin TSOPI  
63 ball BGA  
67 ball BGA  
Pb-free  
Pb-free  
Pb-free  
F59D1G161MA -45TG2L  
F59D1G161MA -45BG2L  
45 ns  
45 ns  
48 pin TSOPI  
63 ball BGA  
Pb-free  
Pb-free  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Jul. 2015  
Revision: 1.0 1/51  

与F59D1G161MA-45BG2L相关器件

型号 品牌 获取价格 描述 数据表
F59D1G161MA-45TG2L ESMT

获取价格

1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G161MB-45BG2M ESMT

获取价格

1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G161MB-45TG2M ESMT

获取价格

1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81LB ESMT

获取价格

1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81LB-45BCG2M ESMT

获取价格

1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81LB-45BG2M ESMT

获取价格

1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81LB-45TG2M ESMT

获取价格

1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81MA ESMT

获取价格

1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81MA-45BCG2L ESMT

获取价格

1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81MA-45BG2L ESMT

获取价格

1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory