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F5055

更新时间： 2024-03-03 10:10:16
品牌 Logo 应用领域
富士电机 - FUJI /
页数 文件大小 规格书
6页 249K
描述
SSOP-20

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中文翻译

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F5055 数据手册

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http://www.fujisemi.com  
F5055  
Intelligent Power MOSFET  
FUJI Intelligent Power MOSFET  
Features  
Outline drawings [mm]  
Connection  
ꢀ Two N-ch power MOSFET circuits  
ꢀ Over temperature protection  
ꢀ Short circuit protection  
ꢀ Low on-resistance  
SSOP-20  
ꢀ High speed switching  
Applications  
ꢀ Solenoid driver  
ꢀ Lamp driver  
ꢀ Replacements for fuse and relay  
Maximum ratings and characteristics  
Absolute maximum ratings (at Tc=25°C, unless otherwise specified)  
Description  
Symbol  
Characteristics  
Unit  
V
Remarks  
Drain-source voltage  
VDSS  
40  
-0.3~7.0  
5.9  
DC  
Gate-source voltage  
VGSS  
V
DC  
Continuous drain current  
Maximum power dissipation  
Operating junction temperature  
Storage temperature range  
I
D
A
for each channel  
P
D
7.8  
W
°C  
°C  
for each channel  
Tj  
150  
–
Tstg  
-55 ~ 150  
–
Single pulse inductive load  
switch-off energy dissipation  
T
j
=150°C, L=5mH, IDP=8A Single pulse, dv/dt≤10V/μs  
E
CL  
100  
mJ  
for each channel  
Electrical characteristics (at Tc=25°C unless otherwise specified)  
Description  
Symbol  
Conditions  
min.  
40  
1.0  
2.8  
–
typ.  
–
max.  
60  
Unit  
V
Drain-source clamp voltage  
Gate threshold voltage  
V
V
V
DSS  
I
I
D
=1mA, VGS=0V  
GS (th)  
GS (p)  
D
=10mA, VDS=13V  
–
2.8  
7.0  
60  
V
Operation gate voltage (protection circuit operates)  
–
–
V
V
V
V
V
DS=16V, VGS=0~1.5V  
DS=30V, VGS=0~1.5V  
GS=5V  
–
μA  
mA  
μA  
μA  
mΩ  
μs  
μs  
˚C  
A
Zero gate voltage drain current  
Gate-sourse leakage current  
I
DSS  
–
–
1
I
I
GS (n)  
*
–
–
250  
350  
140  
50  
GS (un)**  
DS (on)  
GS=5V, Tj>150˚C  
–
–
Drain-source on-state resistance  
Turn-on time  
R
I
D
=5A, VGS=5V  
–
–
t
t
on  
off  
trip  
OC  
–
–
V
DS=13V, I =0.5A, VGS=5V  
D
Turn-off time  
–
–
50  
Over-temperature protection  
Short circuit protection  
Note * : Under normal operation  
T
V
GS=5V  
GS=5V  
150  
12  
–
–
I
V
–
32  
Note ** : Under self protection (Short circuit ~ Short circuit protection ~ Over-temperature protection)  
Electrical characteristics (at Tc=-40~105°C unless otherwise specified)  
Description  
Symbol  
Conditions  
min.  
38  
1.0  
3.0  
–
typ.  
–
max.  
62  
Unit  
V
Drain-source clamp voltage  
Gate threshold voltage  
V
V
V
DSS  
I
I
D
=1mA, VGS=0V  
GS (th)  
GS (p)  
D
=10mA, VDS=14V  
–
3.0  
6.7  
100  
1.6  
300  
350  
205  
62  
V
Operation gate voltage (protection circuit operates)  
–
–
V
V
V
V
V
DS=16V, VGS=0V  
DS=30V, VGS=0V  
GS=5V  
–
μA  
mA  
μA  
μA  
mΩ  
μs  
μs  
A
Zero gate voltage drain current  
Gate-sourse leakage current  
I
DSS  
–
–
I
I
GS (n)  
*
–
–
GS (un)**  
DS (on)  
GS=5V, Tj>150˚C  
–
–
Drain-source on-state resistance  
Turn-on time  
R
I
D
=5A, VGS=5V  
–
–
t
t
I
on  
off  
OC  
–
–
V
DS=13V, I  
GS=5V  
D
=5A, VGS=5V  
Turn-off time  
–
–
52  
Short circuit protection  
Note * : Under normal operation  
V
8.4  
–
42  
Note ** : Under self protection (Short circuit ~ Short circuit protection ~ Over-temperature protection)  
Thermal resistance  
Description  
Symbol  
Test conditions  
min.  
typ.  
max.  
Unit  
Thermal resistance  
R
th (j-c)  
Junction-case  
–
–
16.0  
°C/W  
1
123456

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