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F5043
Intelligent Power MOSFET
FUJI Intelligent Power MOSFET
Features
Outline drawings [mm]
Connection
• Over temperature protection
• Short circuit protection
• Low on-resistance
T-pack(s)
• High speed switching
Applications
• Solenoid driver
• Lamp driver
• Replacements for fuse and relay
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C, unless otherwise specified)
Description
Symbol
Characteristics
Unit
V
Remarks
Drain-source voltage
VDSS
40
-0.3~7.0
12
DC
DC
–
Gate-source voltage
VGSS
V
Continuous drain current
Maximum power dissipation
Operating junction temperature
Storage temperature range
I
D
A
P
D
30
W
°C
°C
–
Tj
150
–
Tstg
-55 ~ 150
–
T
j
=150°C, L=5mH, I
D
=8A
Single pulse inductive load switch-off energy dissipation
E
CL
100
mJ
Single pulse, dv/dt≤10V/μs
Electrical characteristics (at Tc=25°C unless otherwise specified)
Description
Symbol
Conditions
min.
typ.
max.
60
Unit
V
Drain-source clamp voltage
Gate threshold voltage
V
V
V
DSS
I
I
D
=1mA, VGS=0V
40
1.0
3.0
–
–
–
–
–
–
–
–
–
–
–
–
–
GS (th)
GS (p)
D
=10mA, VDS=13V
2.8
7.0
100
1
V
Operation gate voltage (protection circuit operates)
–
V
V
DS=13V, VGS=0V
DS=30V, VGS=0V
μA
mA
μA
μA
mΩ
μs
μs
˚C
A
Zero gate voltage drain current
Gate-sourse leakage current
I
DSS
V
–
I
I
GS (n)**
–
500
800
140
50
VGS=5V
GS (un)***
–
Drain-source on-state resistance
Turn-on time
R
DS (on)
on
off
trip
OC
I
D
=5A, VGS=5V
–
t
t
–
V
DS=13V, I =5A, VGS=5V
D
Turn-off time
–
50
Over-temperature protection
Short circuit protection
T
V
GS=5V
GS=5V
150
12
–
I
V
–
Note ** : Under normal operation
Note *** : Under self protection
Electrical characteristics (at Tc=-40~105°C unless otherwise specified)
Description
Symbol
Conditions
min.
38
1.0
3.0
–
typ.
–
max.
62
Unit
V
Drain-source clamp voltage
Gate threshold voltage
V
V
V
DSS
I
I
D
=1mA, VGS=0V
GS (th)
GS (p)
D
=10mA, VDS=13V
–
3.0
6.7
170
1.6
600
940
205
62
V
Operation gate voltage (protection circuit operates)
–
–
V
V
V
V
V
DS=13V, VGS=0V
DS=30V, VGS=0V
GS=5V
–
μA
mA
μA
μA
mΩ
μs
μs
A
Zero gate voltage drain current
Gate-sourse leakage current
I
DSS
–
–
I
I
GS (n)
*
–
–
GS (un)**
DS (on)
GS=5V, Tj>150˚C
–
–
Drain-source on-state resistance
Turn-on time
R
I
D
=5A, VGS=5V
–
–
t
t
I
on
off
OC
–
–
V
DS=13V, I
GS=5V
D
=5A, VGS=5V
Turn-off time
–
–
52
Short circuit protection
Note * : Under normal operation
V
8.4
–
–
Note ** : Under self protection (Short circuit ~ Short circuit protection ~ Over-temperature protection)
Thermal resistance
Description
Symbol
Test conditions
Junction-case
min.
typ.
–
max.
4.2
Unit
°C/W
°C/W
R
R
th (j-c)
–
–
Thermal resistance
th (j-a)
Junction-ambient
–
100
1