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F5018

更新时间： 2024-03-03 10:11:36
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富士电机 - FUJI /
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F5018 数据手册

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http://www.fujisemi.com  
F5018  
Intelligent Power MOSFET  
FUJI Intelligent Power MOSFET  
Features  
Outline drawings [mm]  
Connection  
• Over temperature protection  
• Short circuit protection  
• Low on-resistance  
K-pack(s)  
• High speed switching  
Applications  
• Solenoid driver  
• Lamp driver  
• Replacements for fuse and relay  
Maximum ratings and characteristics  
Absolute maximum ratings (at Tc=25°C, unless otherwise specified)  
Description  
Symbol  
Characteristics  
Unit  
V
Remarks  
Drain-source voltage  
VDSS  
40  
DC-0.3~7.0  
8
DC  
DC  
Gate-source voltage  
VGSS  
V
Continuous drain current  
Maximum power dissipation  
Operating junction temperature  
Storage temperature range  
I
D
A
Tc=25˚C  
Tc=25°C  
–
P
D
15  
W
°C  
°C  
Tj  
150  
Tstg  
-55 ~ 150  
–
T
J
=150°C, L=5mH, I  
D
=8A  
Single pulse inductive load switch-off energy dissipation  
E
CL  
100  
mJ  
Single pulse, dv/dt≤10V/μs  
Electrical characteristics (at Tc=25°C unless otherwise specified)  
Description  
Symbol  
Conditions  
min.  
typ.  
max.  
60  
Unit  
V
Drain-source clamp voltage  
Gate threshold voltage  
Operation gate voltage  
Zero gate voltage drain current  
V
V
V
DSS  
I
I
D
=1mA, VGS=0V  
40  
1.0  
3.0  
–
–
–
–
–
–
–
–
–
–
–
GS (th)  
GS (p)  
D
=10mA, VDS=13V  
2.8  
7.0  
V
–
V
I
I
I
DSS  
GS (n)  
VDS=30V, VGS=0V  
1.0  
mA  
μA  
μA  
mΩ  
μs  
μs  
˚C  
*
–
500  
800  
140  
200  
200  
–
Gate-sourse leakage current  
VGS=5V  
GS (un)**  
DS (on)  
–
Drain-source on-state resistance  
Turn-on time  
R
I
D
=5A, VGS=5V  
–
t
t
on  
off  
trip  
–
V
V
V
DS=13V, R =2.6Ω, VGS=5V  
L
Turn-off time  
–
Over-temperature protection  
T
CC=13V, VGS=5V  
CC=13V, VGS=5V  
150  
Short circuit protection  
I
OC  
12  
–
–
A
Note * : Under normal operation  
Note ** : Under self protection  
Electrical characteristics (at Tc=-40~105°C, unless otherwise specified)  
Description  
Symbol  
Conditions  
min.  
38  
1.0  
3.0  
–
typ.  
–
max.  
62  
Unit  
V
Drain-source clamp voltage  
Gate threshold voltage  
V
V
V
DSS  
I
I
D
=1mA, VGS=0V  
GS (th)  
GS (p)  
D
=10mA, VDS=13V  
–
3.0  
6.7  
V
Operation gate voltage (protection circuit operates)  
–
–
V
V
V
V
V
DS=13V, VGS=0V  
DS=30V, VGS=0V  
GS=5V*  
–
170  
1.6  
μA  
mA  
μA  
μA  
mΩ  
μs  
μs  
A
Zero gate voltage drain current  
Gate-sourse leakage current  
I
DSS  
–
–
I
I
GS (n)  
–
–
600  
940  
205  
240  
220  
–
GS (un)  
GS=5V, Tj>150˚C**  
–
–
Drain-source on-state resistance  
Turn-on time  
R
DS (on)  
on  
off  
OC  
I
D
=5A, VGS=5V  
–
–
t
t
I
–
–
V
DS=13V, I  
GS=5V  
D
=5A, VGS=5V  
Turn-off time  
–
–
Short circuit protection  
V
8.4  
–
Note * : Under normal operation  
Note ** : Under self protection (Short circuit ~ Short circuit protection ~ Over-temperature protection)  
Thermal resistance  
Description  
Symbol  
Test conditions  
Junction-case  
min.  
typ.  
–
max.  
8.3  
Unit  
°C/W  
°C/W  
R
R
th (j-c)  
–
–
Thermal resistance  
th (j-a)  
Junction-ambient  
–
125  
1
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