Datasheet > F501

F501

更新时间： 2024-09-26 18:09:43

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	5799K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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F501 数据手册

SMD Type

Transistors

Silicon N-Channel Power MOSFET (Depletion Mode)

F501

SOT-23

Unit: mm

■ Features

● V^{DS (V)}= 500V

+0.1

-0.1

2.9

0.4

+0.1

-0.1

● ID = 0.03 A (VGS = 10V)

● R^DS(ON)＜ 850 Ω (VGS = 10V)

● R^DS(ON)＜ 750 Ω (VGS = 0V)

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

1. Gate

2. Source

3. Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

500

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

0.03

0.024

0.12

0.5

TA=25℃

Continuous Drain Current

TA=70℃

Pulsed Drain Current

Power Dissipation

TA=25℃

Peak Diode Recovery dv/dt

Thermal Resistance.Junction- to-Ambient

MaximumTemperature for Soldering

Junction Temperature

dv/dt

V/ns

℃/W

RθJA

250

300

150

℃

Storage Temperature Range

stg

-55 to 150

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