Datasheet > F49L800BA

F49L800BA

更新时间： 2024-01-21 23:21:52

品牌	Logo	应用领域
晶豪 - ESMT		闪存
页数	文件大小	规格书
47页	416K
描述
8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

F49L800BA 数据手册

ESMT

F49L800UA/F49L800BA

8 Mbit (1M x 8/512K x 16)

3V Only CMOS Flash Memory

1. FEATURES

Single supply voltage 2.7V-3.6V

Fast access time: 70/90 ns

Ready/Busy (RY/BY )

- RY/

output pin for detection of program or erase

operation completion

End of program or erase detection

- Data polling

- Toggle bits

Hardware reset

1,048,576x8 / 524,288x16 switchable by BYTE pin

Compatible with JEDEC standard

- Pin-out, packages and software commands

compatible with single-power supply Flash

Low power consumption

- 7mA typical active current

- 25uA typical standby current

100,000 program/erase cycles typically

20 years data retention

Command register architecture

- Hardware pin(

RESET

to the read mode

) resets the internal state machine

Sector Protection /Unprotection

- Hardware Protect/Unprotect any combination of sectors

from a program or erase operation.

Low V_CCWrite inhibit is equal to or less than 2.0V

Boot Sector Architecture

- Byte programming (9us typical)

- Sector Erase(sector structure: one 16 KB, two 8 KB,

one 32 KB, and fifteen 64 KB)

- U = Upper Boot Block

Auto Erase (chip & sector) and Auto Program

- Any combination of sectors can be erased

concurrently; Chip erase also provided.

- Automatically program and verify data at specified

address

- B = Bottom Boot Block

Packages available:

- 48-pin TSOPI

Erase Suspend/Erase Resume

- Suspend or Resume erasing sectors to allow the

read/program in another sector

2. ORDERING INFORMATION

Part No

Boot

Speed

Package

Part No

Boot

Speed

Package

F49L800UA-70T

F49L800BA-70T

Upper

70 ns

TSOPI

F49L800UA-90T

F49L800BA-90T

Upper

90 ns

TSOPI

Bottom

3. GENERAL DESCRIPTION

The F49L800UA/F49L800BA is a 8 Megabit, 3V only

CMOS Flash memory device organized as 1M bytes of 8

bits or 512K words of 16bits. This device is packaged in

standard 48-pin TSOP. It is designed to be programmed

and erased both in system and can in standard EPROM

programmers.

The F49L800UA/F49L800BA features a sector erase

architecture. The device memory array is divided into one

16 Kbytes, two 8 Kbytes, one 32 Kbytes, and fifteen 64

Kbytes. Sectors can be erased individually or in groups

without affecting the data in other sectors. Multiple-sector

erase and whole chip erase capabilities provide the

flexibility to revise the data in the device.

With access times of 70 ns and 90 ns, the

F49L800UA/F49L800BA allows the operation of

high-speed microprocessors. The device has separate

The sector protect/unprotect feature disables both

program and erase operations in any combination of the

sectors of the memory. This can be achieved in-system or

via programming equipment.

chip enable

, write enable

, and output enable

controls. ESMT's memory devices reliably store memory

data even after 100,000 program and erase cycles.

A low V_CCdetector inhibits write operations on loss of

power. End of program or erase is detected by the

Ready/Busy status pin, Data Polling of DQ7, or by the

Toggle Bit I feature on DQ6. Once the program or erase

cycle has been successfully completed, the device

internally resets to the Read mode.

The F49L800UA/F49L800BA is entirely pin and

command set compatible with the JEDEC standard for 8

Megabit Flash memory devices. Commands are written to

the command register using standard microprocessor

write timings.

Elite Semiconductor Memory Technology Inc.

Publication Date : May. 2007

Revision: 1.2

1/47

12 3 4 5 6 7...47

中文翻译

下载PDF

与F49L800BA相关器件

型号	品牌	获取价格	描述	数据表
F49L800BA-70T	ESMT	获取价格	8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
F49L800BA-70TG	ESMT	获取价格	8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
F49L800BA-70TIG	ESMT	获取价格	8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
F49L800BA-90T	ESMT	获取价格	8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
F49L800BA-90TG	ESMT	获取价格	8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
F49L800BA-90TIG	ESMT	获取价格	8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
F49L800UA	ESMT	获取价格	8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
F49L800UA_08	ESMT	获取价格	8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
F49L800UA_1	ESMT	获取价格	8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
F49L800UA-70T	ESMT	获取价格	8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory

与F49L800BA相关文章

压敏电阻与气体放电管串联使用的专业解析
2024-07-01

1
手册解读：MMBT3904参数与管脚图及代换
2024-07-01

1
74LS298PC手册解读：参数说明、引脚说明、替代型号推荐
2024-07-01

1
L6234手册解读：引脚信息、电气参数
2024-07-01

1

产品中心

服务支持

精选活动

关于我们

帮助中心

F49L800BA

F49L800BA 数据手册

与F49L800BA相关器件

与F49L800BA相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

F49L800BA

F49L800BA 数据手册

与F49L800BA相关器件

与F49L800BA相关文章

您还可以找

您在本页遇到什么问题？