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F49L160BA-70T

更新时间： 2024-11-27 03:35:35
品牌 Logo 应用领域
晶豪 - ESMT 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
51页 434K
描述
16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory

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F49L160BA-70T 技术参数

是否无铅：含铅是否Rohs认证：不符合
生命周期：Contact Manufacturer零件包装代码：TSOP1
包装说明：TSOP1, TSSOP48,.8,20针数：48
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.32.00.51风险等级：5.64
Is Samacsys：N最长访问时间：70 ns
备用内存宽度：8启动块：BOTTOM
命令用户界面：YES通用闪存接口：YES
数据轮询：YESJESD-30 代码：R-PDSO-G48
长度：18.4 mm内存密度：16777216 bit
内存集成电路类型：FLASH内存宽度：16
湿度敏感等级：1功能数量：1
部门数/规模：1,2,1,31端子数量：48
字数：1048576 words字数代码：1000000
工作模式：ASYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：1MX16
封装主体材料：PLASTIC/EPOXY封装代码：TSOP1
封装等效代码：TSSOP48,.8,20封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE并行/串行：PARALLEL
峰值回流温度（摄氏度）：225电源：3/3.3 V
编程电压：3 V认证状态：Not Qualified
就绪/忙碌：YES座面最大高度：1.2 mm
部门规模：16K,8K,32K,64K最大待机电流：0.000005 A
子类别：Flash Memories最大压摆率：0.03 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
切换位：YES类型：NOR TYPE
宽度：12 mmBase Number Matches：1

F49L160BA-70T 数据手册

 浏览型号F49L160BA-70T的Datasheet PDF文件第2页浏览型号F49L160BA-70T的Datasheet PDF文件第3页浏览型号F49L160BA-70T的Datasheet PDF文件第4页浏览型号F49L160BA-70T的Datasheet PDF文件第5页浏览型号F49L160BA-70T的Datasheet PDF文件第6页浏览型号F49L160BA-70T的Datasheet PDF文件第7页 
ESMT  
F49L160UA/F49L160BA  
16 Mbit (2M x 8/1M x 16)  
3V Only CMOS Flash Memory  
1. FEATURES  
z
Single supply voltage 2.7V-3.6V  
Fast access time: 70/90 ns  
z
Ready/Busy (RY/BY )  
z
- RY/  
output pin for detection of program or erase  
BY  
operation completion  
End of program or erase detection  
- Data polling  
- Toggle bits  
Hardware reset  
z
z
2,097,152x8 / 1,048,576x16 switchable by BYTE pin  
Compatible with JEDEC standard  
- Pin-out, packages and software commands  
compatible with single-power supply Flash  
Low power consumption  
- 7mA typical active current  
- 25uA typical standby current  
100,000 program/erase cycles typically  
20 Years Data Retention  
Command register architecture  
z
z
z
z
- Hardware pin(  
RESET  
to the read mode  
) resets the internal state machine  
z
z
z
Sector Protection /Unprotection  
- Hardware Protect/Unprotect any combination of sectors  
from a program or erase operation.  
Low VCC Write inhibit is equal to or less than 2.0V  
Boot Sector Architecture  
z
z
- Byte Word Programming (9μs/11μs typical)  
- Byte Mode : One 16KB, two 8KB, one 32KB, and  
thirty-one 64KB sectors.  
- U = Upper Boot Block  
- B = Bottom Boot Block  
Packages available:  
- 48-pin TSOPI  
CFI (Common Flash Interface) complaint  
- Provides device-specific information to the system,  
allowing host software to easily reconfigure to different  
Flash devices.  
- Word Mode : one 8K word, two 4K word, one 16K  
word, and thirty-one 32 K word sectors.  
Auto Erase (chip & sector) and Auto Program  
- Any combination of sectors can be erased  
concurrently; Chip erase also provided.  
- Automatically program and verify data at specified  
address  
z
z
z
z
Erase Suspend/Erase Resume  
- Suspend or Resume erasing sectors to allow the  
read/program in another sector  
2. ORDERING INFORMATION  
Part No  
Boot  
Speed  
Package  
Part No  
Boot  
Speed  
Package  
F49L160UA-70T  
F49L160BA-70T  
Upper  
70 ns  
70 ns  
TSOPI  
TSOPI  
F49L160UA-90T  
F49L160BA-90T  
Upper  
90 ns  
90 ns  
TSOPI  
TSOPI  
Bottom  
Bottom  
3. GENERAL DESCRIPTION  
The F49L160UA/F49L160BA is a 16 Megabit, 3V only  
CMOS Flash memory device organized as 2M bytes of 8  
bits or 1M words of 16bits. This device is packaged in  
standard 48-pin TSOP. It is designed to be programmed  
and erased both in system and can in standard EPROM  
programmers.  
The F49L160UA/F49L160BA features a sector erase  
architecture. The device array is divided into one 16KB,  
two 8KB, one 32KB, and thirty-one 64KB for byte mode.  
The device memory array is divided into one 8K word, two  
4K word, one 16K word, and thirty-one 32K word sectors  
for word mode. Sectors can be erased individually or in  
groups without affecting the data in other sectors.  
Multiple-sector erase and whole chip erase capabilities  
provide the flexibility to revise the data in the device.  
With access times of 70 ns and 90 ns, the  
F49L160UA/F49L160BA allows the operation of  
high-speed microprocessors. The device has separate  
The sector protect/unprotect feature disables both  
program and erase operations in any combination of the  
sectors of the memory. This can be achieved in-system or  
via programming equipment.  
chip enable  
, write enable  
, and output enable  
WE  
CE  
controls. EFST's memory devices reliably store  
OE  
memory data even after 100,000 program and erase  
cycles.  
A low VCC detector inhibits write operations on loss of  
power. End of program or erase is detected by the  
Ready/Busy status pin, Data Polling of DQ7, or by the  
Toggle Bit I feature on DQ6. Once the program or erase  
cycle has been successfully completed, the device  
internally resets to the Read mode.  
The F49L160UA/F49L160BA is entirely pin and  
command set compatible with the JEDEC standard for 16  
Megabit Flash memory devices. Commands are written to  
the command register using standard microprocessor  
write timings.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Dec. 2006  
Revision: 1.3  
1/51  
1234567...51

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