Datasheet > 存储 > 闪存> F49L160BA-70T

F49L160BA-70T

更新时间： 2024-02-01 04:55:55

品牌	Logo	应用领域
晶豪 - ESMT		闪存存储内存集成电路光电二极管
页数	文件大小	规格书
51页	434K
描述
16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory

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F49L160BA-70T 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
零件包装代码：	TSOP1	包装说明：	TSOP1, TSSOP48,.8,20
针数：	48	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8542.32.00.51
风险等级：	5.19	Is Samacsys：	N
最长访问时间：	70 ns	备用内存宽度：	8
启动块：	BOTTOM	命令用户界面：	YES
通用闪存接口：	YES	数据轮询：	YES
JESD-30 代码：	R-PDSO-G48	长度：	18.4 mm
内存密度：	16777216 bit	内存集成电路类型：	FLASH
内存宽度：	16	功能数量：	1
部门数/规模：	1,2,1,31	端子数量：	48
字数：	1048576 words	字数代码：	1000000
工作模式：	ASYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	1MX16
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSOP1
封装等效代码：	TSSOP48,.8,20	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE	并行/串行：	PARALLEL
电源：	3/3.3 V	编程电压：	3 V
认证状态：	Not Qualified	就绪/忙碌：	YES
座面最大高度：	1.2 mm	部门规模：	16K,8K,32K,64K
最大待机电流：	0.1 A	子类别：	Flash Memories
最大压摆率：	0.05 mA	最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	2.7 V	标称供电电压 (Vsup)：	3 V
表面贴装：	YES	技术：	CMOS
温度等级：	COMMERCIAL	端子形式：	GULL WING
端子节距：	0.5 mm	端子位置：	DUAL
切换位：	YES	类型：	NOR TYPE
宽度：	12 mm	Base Number Matches：	1

F49L160BA-70T 数据手册

ESMT

F49L160UA/F49L160BA

16 Mbit (2M x 8/1M x 16)

3V Only CMOS Flash Memory

1. FEATURES

Single supply voltage 2.7V-3.6V

Fast access time: 70/90 ns

Ready/Busy (RY/BY )

- RY/

output pin for detection of program or erase

operation completion

End of program or erase detection

- Data polling

- Toggle bits

Hardware reset

2,097,152x8 / 1,048,576x16 switchable by BYTE pin

Compatible with JEDEC standard

- Pin-out, packages and software commands

compatible with single-power supply Flash

Low power consumption

- 7mA typical active current

- 25uA typical standby current

100,000 program/erase cycles typically

20 Years Data Retention

Command register architecture

- Hardware pin(

RESET

to the read mode

) resets the internal state machine

Sector Protection /Unprotection

- Hardware Protect/Unprotect any combination of sectors

from a program or erase operation.

Low V_CCWrite inhibit is equal to or less than 2.0V

Boot Sector Architecture

- Byte Word Programming (9μs/11μs typical)

- Byte Mode : One 16KB, two 8KB, one 32KB, and

thirty-one 64KB sectors.

- U = Upper Boot Block

- B = Bottom Boot Block

Packages available:

- 48-pin TSOPI

CFI (Common Flash Interface) complaint

- Provides device-specific information to the system,

allowing host software to easily reconfigure to different

Flash devices.

- Word Mode : one 8K word, two 4K word, one 16K

word, and thirty-one 32 K word sectors.

Auto Erase (chip & sector) and Auto Program

- Any combination of sectors can be erased

concurrently; Chip erase also provided.

- Automatically program and verify data at specified

address

Erase Suspend/Erase Resume

- Suspend or Resume erasing sectors to allow the

read/program in another sector

2. ORDERING INFORMATION

Part No

Boot

Speed

Package

Part No

Boot

Speed

Package

F49L160UA-70T

F49L160BA-70T

Upper

70 ns

TSOPI

F49L160UA-90T

F49L160BA-90T

Upper

90 ns

TSOPI

Bottom

3. GENERAL DESCRIPTION

The F49L160UA/F49L160BA is a 16 Megabit, 3V only

CMOS Flash memory device organized as 2M bytes of 8

bits or 1M words of 16bits. This device is packaged in

standard 48-pin TSOP. It is designed to be programmed

and erased both in system and can in standard EPROM

programmers.

The F49L160UA/F49L160BA features a sector erase

architecture. The device array is divided into one 16KB,

two 8KB, one 32KB, and thirty-one 64KB for byte mode.

The device memory array is divided into one 8K word, two

4K word, one 16K word, and thirty-one 32K word sectors

for word mode. Sectors can be erased individually or in

groups without affecting the data in other sectors.

Multiple-sector erase and whole chip erase capabilities

provide the flexibility to revise the data in the device.

With access times of 70 ns and 90 ns, the

F49L160UA/F49L160BA allows the operation of

high-speed microprocessors. The device has separate

The sector protect/unprotect feature disables both

program and erase operations in any combination of the

sectors of the memory. This can be achieved in-system or

via programming equipment.

chip enable

, write enable

, and output enable

controls. EFST's memory devices reliably store

memory data even after 100,000 program and erase

cycles.

A low V_CCdetector inhibits write operations on loss of

power. End of program or erase is detected by the

Ready/Busy status pin, Data Polling of DQ7, or by the

Toggle Bit I feature on DQ6. Once the program or erase

cycle has been successfully completed, the device

internally resets to the Read mode.

The F49L160UA/F49L160BA is entirely pin and

command set compatible with the JEDEC standard for 16

Megabit Flash memory devices. Commands are written to

the command register using standard microprocessor

write timings.

Elite Semiconductor Memory Technology Inc.

Publication Date : Dec. 2006

Revision: 1.3

1/51

12 3 4 5 6 7...51

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与F49L160BA-70T相关器件

型号	品牌	获取价格	描述	数据表
F49L160BA-70TG	ESMT	获取价格	16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160BA-90T	ESMT	获取价格	16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160BA-90TG	ESMT	获取价格	16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160BA-90TIG	ESMT	获取价格	16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160UA	ESMT	获取价格	16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160UA_08	ESMT	获取价格	16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160UA_1	ESMT	获取价格	16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160UA-70T	ESMT	获取价格	16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160UA-70TG	ESMT	获取价格	16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160UA-90T	ESMT	获取价格	16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory

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