F49L040A-90N

更新时间： 2024-01-23 22:55:36

品牌	Logo	应用领域
晶豪 - ESMT		闪存
页数	文件大小	规格书
41页	391K
描述
4 Mbit (512K x 8) 3V Only CMOS Flash Memory

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技术参数
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F49L040A-90N 技术参数

是否Rohs认证：	不符合	生命周期：	Contact Manufacturer
包装说明：	TSSOP, TSSOP32,.56,20	Reach Compliance Code：	unknown
风险等级：	5.88	最长访问时间：	90 ns
命令用户界面：	YES	数据轮询：	YES
耐久性：	10000 Write/Erase Cycles	JESD-30 代码：	R-PDSO-G32
JESD-609代码：	e0	内存密度：	4194304 bit
内存集成电路类型：	FLASH	内存宽度：	8
部门数/规模：	8	端子数量：	32
字数：	524288 words	字数代码：	512000
最高工作温度：	70 °C	最低工作温度：
组织：	512KX8	封装主体材料：	PLASTIC/EPOXY
封装代码：	TSSOP	封装等效代码：	TSSOP32,.56,20
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行：	PARALLEL	电源：	3.3 V
认证状态：	Not Qualified	部门规模：	64K
最大待机电流：	0.0001 A	子类别：	Flash Memories
最大压摆率：	0.03 mA	标称供电电压 (Vsup)：	3.3 V
表面贴装：	YES	技术：	CMOS
温度等级：	COMMERCIAL	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING	端子节距：	0.5 mm
端子位置：	DUAL	切换位：	YES
类型：	NOR TYPE	Base Number Matches：	1

F49L040A-90N 数据手册

EFST

F49L040A

4 Mbit (512K x 8)

3V Only CMOS Flash Memory

1. FEATURES

ꢀ

Single supply voltage 3.0V-3.6V

ꢀ

End of program or erase detection

- Data polling

Fast access time: 70/90 ns

Compatible with JEDEC standard

- Pin-out, packages and software commands

compatible with single-power supply Flash

Low power consumption

- Toggle bits

Sector Protection /Un-protection

- Hardware Protect/Unprotect any combination of sectors

from a program or erase operation.

Low V_CCWrite inhibit is equal to or less than 2.0V

Boot Sector Architecture

ꢀ

- 7mA typical active current

ꢀ

- 25uA typical standby current

10,000 minimum program/erase cycles

Command register architecture

ꢀ

- U = Upper Boot Sector

- B = Bottom Boot Sector

Packages available:

- Byte programming (9us typical)

- Sector Erase(sector structure: eight 64 KB)

Auto Erase (chip & sector) and Auto Program

- Any combination of sectors can be erased

concurrently; Chip erase also provided.

- Automatically program and verify data at specified

address

ꢀ

- 32-pin TSOPI

- 32-pin PLCC

ꢀ

Erase Suspend/Erase Resume

- Suspend or Resume erasing sectors to allow the

read/program in another sector

2. ORDERING INFORMATION

Part No

Boot

Speed

Package

Part No

Boot

Speed

Package

F49L040A-70T

F49L040A-70N

Upper/Bottom

70 ns

TSOPI

PLCC

F49L040A-90T

F49L040A-90N

Upper/Bottom

90 ns

TSOPI

PLCC

3. GENERAL DESCRIPTION

The F49L040A is a 4 Megabit, 3V only CMOS Flash

memory device organized as 512K bytes of 8 bits. This

device is packaged in standard 32-pin TSOPI and 32-pin

PLCC. It is designed to be programmed and erased both

in system and can in standard EPROM programmers.

The F49L040A features a sector erase architecture.

The device memory array is divided into eight 64 Kbytes.

Sectors can be erased individually or in groups without

affecting the data in other sectors. Multiple-sector erase

and whole chip erase capabilities provide the flexibility to

revise the data in the device.

With access times of 70 ns and 90 ns, the F49L040A

allows the operation of high-speed microprocessors. The

The sector protect/unprotect feature disables both

program and erase operations in any combination of the

sectors of the memory. This can be achieved in-system or

via programming equipment.

device has separate chip enable

, write enable

and output enable

controls. EFST's memory devices

reliably store memory data even after 100,000 program

and erase cycles.

A low V_CCdetector inhibits write operations on loss of

power. End of program or erase is detected by the Data

Polling of DQ7, or by the Toggle Bit I feature on DQ6.

Once the program or erase cycle has been successfully

completed, the device internally resets to the Read mode.

The F49L040A is entirely pin and command set

compatible with the JEDEC standard for 4 Megabit Flash

memory devices. Commands are written to the command

Elite Flash Storage Technology Inc.

Publication Date : Apr. 2005

Revision: 1.0

1/41

12 3 4 5 6 7...41

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与F49L040A-90N相关器件

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F49L160BA-90T	ESMT	获取价格	16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160BA-90TG	ESMT	获取价格	16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160BA-90TIG	ESMT	获取价格	16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160UA	ESMT	获取价格	16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160UA_08	ESMT	获取价格	16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory

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