Datasheet > F49L040A

F49L040A

更新时间： 2024-01-24 12:23:37

品牌	Logo	应用领域
晶豪 - ESMT		闪存
页数	文件大小	规格书
41页	391K
描述
4 Mbit (512K x 8) 3V Only CMOS Flash Memory

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F49L040A 数据手册

EFST

F49L040A

4 Mbit (512K x 8)

3V Only CMOS Flash Memory

1. FEATURES

ꢀ

Single supply voltage 3.0V-3.6V

ꢀ

End of program or erase detection

- Data polling

Fast access time: 70/90 ns

Compatible with JEDEC standard

- Pin-out, packages and software commands

compatible with single-power supply Flash

Low power consumption

- Toggle bits

Sector Protection /Un-protection

- Hardware Protect/Unprotect any combination of sectors

from a program or erase operation.

Low V_CCWrite inhibit is equal to or less than 2.0V

Boot Sector Architecture

ꢀ

- 7mA typical active current

ꢀ

- 25uA typical standby current

10,000 minimum program/erase cycles

Command register architecture

ꢀ

- U = Upper Boot Sector

- B = Bottom Boot Sector

Packages available:

- Byte programming (9us typical)

- Sector Erase(sector structure: eight 64 KB)

Auto Erase (chip & sector) and Auto Program

- Any combination of sectors can be erased

concurrently; Chip erase also provided.

- Automatically program and verify data at specified

address

ꢀ

- 32-pin TSOPI

- 32-pin PLCC

ꢀ

Erase Suspend/Erase Resume

- Suspend or Resume erasing sectors to allow the

read/program in another sector

2. ORDERING INFORMATION

Part No

Boot

Speed

Package

Part No

Boot

Speed

Package

F49L040A-70T

F49L040A-70N

Upper/Bottom

70 ns

TSOPI

PLCC

F49L040A-90T

F49L040A-90N

Upper/Bottom

90 ns

TSOPI

PLCC

3. GENERAL DESCRIPTION

The F49L040A is a 4 Megabit, 3V only CMOS Flash

memory device organized as 512K bytes of 8 bits. This

device is packaged in standard 32-pin TSOPI and 32-pin

PLCC. It is designed to be programmed and erased both

in system and can in standard EPROM programmers.

The F49L040A features a sector erase architecture.

The device memory array is divided into eight 64 Kbytes.

Sectors can be erased individually or in groups without

affecting the data in other sectors. Multiple-sector erase

and whole chip erase capabilities provide the flexibility to

revise the data in the device.

With access times of 70 ns and 90 ns, the F49L040A

allows the operation of high-speed microprocessors. The

The sector protect/unprotect feature disables both

program and erase operations in any combination of the

sectors of the memory. This can be achieved in-system or

via programming equipment.

device has separate chip enable

, write enable

and output enable

controls. EFST's memory devices

reliably store memory data even after 100,000 program

and erase cycles.

A low V_CCdetector inhibits write operations on loss of

power. End of program or erase is detected by the Data

Polling of DQ7, or by the Toggle Bit I feature on DQ6.

Once the program or erase cycle has been successfully

completed, the device internally resets to the Read mode.

The F49L040A is entirely pin and command set

compatible with the JEDEC standard for 4 Megabit Flash

memory devices. Commands are written to the command

Elite Flash Storage Technology Inc.

Publication Date : Apr. 2005

Revision: 1.0

1/41

12 3 4 5 6 7...41

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与F49L040A相关器件

型号	品牌	获取价格	描述	数据表
F49L040A?	ETC	获取价格	4Mb\|512k*8?\|Flash 3.3v?
F49L040A-70N	ESMT	获取价格	Flash, 512KX8, 70ns, PQCC32,
F49L040A-90N	ESMT	获取价格	4 Mbit (512K x 8) 3V Only CMOS Flash Memory
F49L040A-90T	ESMT	获取价格	4 Mbit (512K x 8) 3V Only CMOS Flash Memory
F49L040A-90TP	ESMT	获取价格	暂无描述
F49L160BA	ESMT	获取价格	16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160BA-70T	ESMT	获取价格	16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160BA-70TG	ESMT	获取价格	16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160BA-90T	ESMT	获取价格	16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160BA-90TG	ESMT	获取价格	16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory

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