Datasheet > F49L004BA-70NP

F49L004BA-70NP

更新时间： 2024-11-27 19:55:23

品牌	Logo	应用领域
晶豪 - ESMT		/
页数	文件大小	规格书
46页	588K
描述
Flash Memory,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

F49L004BA-70NP 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.8
Base Number Matches：	1

F49L004BA-70NP 数据手册

EFST

F49L004UA / F49L004BA

4 Mbit (512K x 8)

3V Only CMOS Flash Memory

1. FEATURES

Single supply voltage 2.7V-3.6V

Fast access time: 70/90 ns

Compatible with JEDEC standard

- Pinout, packages and software commands

compatible with single-power supply Flash

Low power consumption

Ready/Busy (RY/

)

- RY/

output pin for detection of program or erase

operation completion

End of program or erase detection

- Data polling

- Toggle bits

- 20mA typical active current

- 0.2uA typical standby current

Hardware reset

- Hardware pin(

RESET

to the read mode

Sector Protection /Unprotection

- Hardware Protect/Unprotect any combination of sectors

from a program or erase operation.

Low V_CCWrite inhibit is equal to or less than 2.0V

Boot Sector Architecture

- U = Upper Boot Sector

- B = Bottom Boot Sector

Packages available:

- 40-pin TSOPI

) resets the internal state machine

100,000 program/erase cycles typically

Command register architecture

- Byte programming (9us typical)

- Sector Erase(sector structure: one 16 KB, two 8 KB,

one 32 KB, and seven 64 KB)

Auto Erase (chip & sector) and Auto Program

- Any combination of sectors can be erased

concurrently; Chip erase also provided.

- Automatically program and verify data at specified

address

Erase Suspend/Erase Resume

- Suspend or Resume erasing sectors to allow the

read/program in another sector

- 32-pin PLCC

2. ORDERING INFORMATION

Part No

Boot

Speed

Package

Part No

Boot

Speed

Package

F49L004UA-70T

F49L004UA-70N

F49L004BA-70T

F49L004BA-70N

Upper

70 ns

TSOPI

PLCC

TSOPI

PLCC

F49L004UA-90 T

F49L004UA-90N

F49L004BA-90T

F49L004BA-90N

Upper

90 ns

TSOPI

PLCC

TSOPI

PLCC

Bottom

3. GENERAL DESCRIPTION

The F49L004UA/ F49L004BA is a 4 Megabit, 3V only

CMOS Flash memory device organized as 512K bytes of

8 bits. This device is packaged in standard 40-pin TSOP

and 32-pin PLCC. It is designed to be programmed and

erased both in system and can in standard EPROM

programmers.

The F49L004UA/ F49L004BA features a sector erase

architecture. The device memory array is divided into one

16 Kbytes, two 8 Kbytes, one 32 Kbytes, and seven 64

Kbytes. Sectors can be erased individually or in groups

without affecting the data in other sectors. Multiple-sector

erase and whole chip erase capabilities provide the

flexibility to revise the data in the device.

With access times of 70 ns and 90 ns, the F49L004UA/

F49L004BA allows the operation of high-speed

microprocessors. The device has separate chip enable

The sector protect/unprotect feature disables both

program and erase operations in any combination of the

sectors of the memory. This can be achieved in-system or

via programming equipment.

, write enable

, and output enable

controls.

EFST's memory devices reliably store memory data even

after 100,000 program and erase cycles.

A low V_CCdetector inhibits write operations on loss of

power. End of program or erase is detected by the

Ready/Busy status pin, Data Polling of DQ7, or by the

Toggle Bit I feature on DQ6. Once the program or erase

cycle has been successfully completed, the device

internally resets to the Read mode.

The F49L004UA/ F49L004BA is entirely pin and

command set compatible with the JEDEC standard for 4

Megabit Flash memory devices. Commands are written to

the command register using standard microprocessor

write timings.

Elite Flash Storage Technology Inc.

Publication Date : Sep. 2003

Revision: 1.0

1/46

12 3 4 5 6 7...46

中文翻译

下载PDF

与F49L004BA-70NP相关器件

型号	品牌	获取价格	描述	数据表
F49L004BA-70T	ESMT	获取价格	4 Mbit (512K x 8) 3V Only CMOS Flash Memory
F49L004BA-90N	ESMT	获取价格	4 Mbit (512K x 8) 3V Only CMOS Flash Memory
F49L004BA-90NP	ESMT	获取价格	Flash Memory,
F49L004BA-90T	ESMT	获取价格	4 Mbit (512K x 8) 3V Only CMOS Flash Memory
F49L004BA-90TP	ESMT	获取价格	暂无描述
F49L004U/BA?	ETC	获取价格	4Mb\|512k*8?\|Flash 3.3v?
F49L004UA	ESMT	获取价格	4 Mbit (512K x 8) 3V Only CMOS Flash Memory
F49L004UA-70N	ESMT	获取价格	4 Mbit (512K x 8) 3V Only CMOS Flash Memory
F49L004UA-70NP	ESMT	获取价格	Flash Memory,
F49L004UA-70T	ESMT	获取价格	4 Mbit (512K x 8) 3V Only CMOS Flash Memory

与F49L004BA-70NP相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

46
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

63
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

60

产品中心

服务支持

精选活动

关于我们

帮助中心

F49L004BA-70NP

F49L004BA-70NP 技术参数

F49L004BA-70NP 数据手册

与F49L004BA-70NP相关器件

与F49L004BA-70NP相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

F49L004BA-70NP

F49L004BA-70NP 技术参数

F49L004BA-70NP 数据手册

与F49L004BA-70NP相关器件

与F49L004BA-70NP相关文章

您还可以找

您在本页遇到什么问题？