Datasheet > F25S004A-50PAG

F25S004A-50PAG

更新时间： 2024-02-22 11:44:02

品牌	Logo	应用领域
晶豪 - ESMT		闪存
页数	文件大小	规格书
33页	485K
描述
2.5V Only 4 Mbit Serial Flash Memory

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数据手册

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F25S004A-50PAG 数据手册

ESMT

Flash

F25S004A

2.5V Only 4 Mbit Serial Flash Memory

FEATURES

Single supply voltage 2.3~3.3V

Auto Address Increment (AAI) WORD Programming

- Decrease total chip programming time over

Byte-Program operations

Speed

- Read max frequency : 33MHz

- Fast Read max frequency : 50MHz

SPI Serial Interface

- SPI Compatible : Mode 0 and Mode3

Low power consumption

- Active current：40mA

- Standby current：75μ A

End of program or erase detection

Write Protect ( WP )

Reliability

- 100,000 typical program/erase cycles

- 20 years Data Retention

Hold Pin (HOLD )

Program

- Byte program time 7μ s (typical)

All Pb-free products are RoHS-Compliant

Erase

- Chip erase time 4sec(typical)

- Block erase time 1sec (typical)

- Sector erase time 90ms(typical)

ORDERING INFORMATION

PRODUCT ID

F25S004A -50PG

F25S004A -50PAG

F25S004A –50DG

SPEED

50MHz

PACKAGE

8 lead SOIC

COMMENTS

Pb-free

150 mil

200 mil

300 mil

8 lead SOIC

8 lead PDIP

Pb-free

GENERAL DESCRIPTION

The F25S004A is a 4Megabit, 2.5V only CMOS Serial Flash

memory device. ESMT’s memory devices reliably store memory

data even after 100,000 program and erase cycles.

Blocks can be erased individually without affecting the data in

other blocks. Whole chip erase capabilities provide the flexibility

to revise the data in the device.

The device features a sector erase architecture. The device

memory array is divided into 128 uniform sectors with 4K byte

each ; 8 uniform blocks with 64K byte each. Sectors can be

erased individually without affecting the data in other sectors.

The sector protect/unprotect feature disables both program and

erase operations in any combination of the sectors of the

memory.

Elite Semiconductor Memory Technology Inc.

Publication Date: Jan. 2009

Revision: 1.1

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