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F25L16PA PDF预览

F25L16PA

更新时间： 2024-09-23 06:58:39
品牌 Logo 应用领域
晶豪 - ESMT 闪存
页数 文件大小 规格书
33页 471K
描述
3V Only 16 Mbit Serial Flash Memory with Dual

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中文翻译

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F25L16PA 数据手册

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ESMT  
Flash  
F25L16PA  
3V Only 16 Mbit Serial Flash Memory with Dual  
„ FEATURES  
y
y
Single supply voltage 2.7~3.6V  
Standard, Dual SPI  
y
y
Page Programming  
- 256 byte per programmable page  
y
Speed  
Auto Address Increment (AAI) WORD Programming  
- Decrease total chip programming time over  
Byte Program operations  
- Read max frequency: 33MHz  
- Fast Read max frequency: 50MHz; 100MHz  
- Fast Read Dual max frequency: 50MHz / 100MHz  
(100MHz / 200MHz equivalent Dual SPI)  
y
y
Lockable 4K bytes OTP security sector  
y
Low power consumption  
- Active current: 35 mA  
- Standby current: 30μ A  
SPI Serial Interface  
- SPI Compatible: Mode 0 and Mode 3  
y
y
End of program or erase detection  
Write Protect ( WP )  
y
y
Reliability  
- 100,000 typical program/erase cycles  
- 20 years Data Retention  
y
y
Hold Pin (HOLD )  
Program  
All Pb-free products are RoHS-Compliant  
- Byte programming time: 7μ s (typical)  
- Page programming time: 1.5 ms (typical)  
y
Erase  
- Chip erase time 10 sec (typical)  
- Block erase time 1 sec (typical)  
- Sector erase time 90 ms (typical)  
„ ORDERING INFORMATION  
Product ID  
Speed  
Package  
Comments  
Pb-free  
Pb-free  
Pb-free  
Pb-free  
Pb-free  
Pb-free  
F25L16PA –50PG  
F25L16PA –100PG  
F25L16PA –50PAG  
50MHz 8 lead SOIC  
100MHz 8 lead SOIC  
50MHz 8 lead SOIC  
150mil  
150mil  
200mil  
200mil  
300mil  
300mil  
F25L16PA –100PAG 100MHz 8 lead SOIC  
F25L16PA –50DG  
F25L16PA –100DG  
50MHz 8 lead PDIP  
100MHz 8 lead PDIP  
„ GENERAL DESCRIPTION  
The F25L16PA is a 16Megabit, 3V only CMOS Serial Flash  
memory device. The device supports the standard Serial  
Peripheral Interface (SPI), and a Dual SPI. ESMT’s memory  
devices reliably store memory data even after 100,000  
programming and erase cycles.  
The device features sector erase architecture. The memory array  
is divided into 512 uniform sectors with 4K byte each; 32 uniform  
blocks with 64K byte each. Sectors can be erased individually  
without affecting the data in other sectors. Blocks can be erased  
individually without affecting the data in other blocks. Whole chip  
erase capabilities provide the flexibility to revise the data in the  
device. The device has Sector, Block or Chip Erase but no page  
erase.  
The memory array can be organized into 8,192 programmable  
pages of 256 byte each. 1 to 256 byte can be programmed at a  
time with the Page Program instruction. The device also can be  
programmed to decrease total chip programming time with Auto  
Address Increment (AAI) programming.  
The sector protect/unprotect feature disables both program and  
erase operations in any combination of the sectors of the  
memory.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Jul. 2009  
Revision: 1.4  
1/33  
1234567...33

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与F25L16PA相关器件

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F25L16PA-100DG ESMT

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 		3V Only 16 Mbit Serial Flash Memory with Dual
F25L16PA-100DG2S ESMT

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 		Flash, 16MX1, PDIP8, 0.300 INCH, 2.54 MM PITCH, ROHS COMPLIANT, PLASTIC, DIP-8
F25L16PA-100HG2S ESMT

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 		Flash, 16MX1, PDSO8, 6 X 5 MM, 1.27 MM PITCH, ROHS COMPLIANT, WSON-8
F25L16PA-100PAG ESMT

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 		3V Only 16 Mbit Serial Flash Memory with Dual
F25L16PA-100PAG2S ESMT

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 		Flash, 16MX1, PDSO8, 0.208 INCH, 1.27 MM PITCH, ROHS COMPLIANT, SOIC-8
F25L16PA-100PG ESMT

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 		3V Only 16 Mbit Serial Flash Memory with Dual
F25L16PA-100PHG2S ESMT

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 		Flash, 16MX1, PDSO16, 0.300 INCH, 1.27 MM PITCH, ROHS COMPLIANT, SOIC-16
F25L16PA-50DG ESMT

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 		3V Only 16 Mbit Serial Flash Memory with Dual
F25L16PA-50DG2S ESMT

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 		Flash, 16MX1, PDIP8, 0.300 INCH, 2.54 MM PITCH, ROHS COMPLIANT, PLASTIC, DIP-8
F25L16PA-50HG2S ESMT

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 		Flash, 16MX1, PDSO8, 6 X 5 MM, 1.27 MM PITCH, ROHS COMPLIANT, WSON-8

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