Datasheet > F25L08PA_1

F25L08PA_1

更新时间： 2024-02-17 03:57:50

品牌	Logo	应用领域
晶豪 - ESMT		闪存
页数	文件大小	规格书
32页	490K
描述
3V Only 8 Mbit Serial Flash Memory with Dual

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中文翻译

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数据手册

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F25L08PA_1 数据手册

ESMT

Flash

F25L08PA

Operation Temperature Condition -40°C~85°C

3V Only 8 Mbit Serial Flash Memory with Dual

FEATURES

Single supply voltage 2.7~3.6V

Standard, Dual SPI

Page Programming

- 256 byte per programmable page

Speed

Auto Address Increment (AAI) WORD Programming

- Decrease total chip programming time over

Byte Program operations

- Read max frequency: 33MHz

- Fast Read max frequency: 50MHz; 100MHz

- Fast Read Dual max frequency: 50MHz / 100MHz

(100MHz / 200MHz equivalent Dual SPI)

Lockable 4K bytes OTP security sector

Low power consumption

- Active current: 35 mA

- Standby current: 30μ A

SPI Serial Interface

- SPI Compatible: Mode 0 and Mode 3

End of program or erase detection

Write Protect ( WP )

Reliability

- 100,000 typical program/erase cycles

- 20 years Data Retention

Hold Pin (HOLD )

Program

All Pb-free products are RoHS-Compliant

- Byte programming time: 7μ s (typical)

- Page programming time: 1.5 ms (typical)

Erase

- Chip erase time 10 sec (typical)

- Block erase time 1 sec (typical)

- Sector erase time 90 ms (typical)

ORDERING INFORMATION

Product ID

Speed

Package

COMMENTS

Pb-free

F25L08PA –50PIG

F25L08PA –100PIG

F25L08PA –50PAIG

50MHz 8 lead SOIC

100MHz 8 lead SOIC

50MHz 8 lead SOIC

150mil

200mil

300mil

Pb-free

F25L08PA –100PAIG 100MHz 8 lead SOIC

Pb-free

F25L08PA –50DIG

F25L08PA –100DIG

50MHz 8 lead PDIP

100MHz 8 lead PDIP

Pb-free

GENERAL DESCRIPTION

The F25L08PA is a 8Megabit, 3V only CMOS Serial Flash

memory device. The device supports the standard Serial

Peripheral Interface (SPI), and a Dual SPI. ESMT’s memory

devices reliably store memory data even after 100,000

programming and erase cycles.

The device features sector erase architecture. The memory array

is divided into 256 uniform sectors with 4K byte each; 16 uniform

blocks with 64K byte each. Sectors can be erased individually

without affecting the data in other sectors. Blocks can be erased

individually without affecting the data in other blocks. Whole chip

erase capabilities provide the flexibility to revise the data in the

device. The device has Sector, Block or Chip Erase but no page

erase.

The memory array can be organized into 4,096 programmable

pages of 256 byte each. 1 to 256 byte can be programmed at a

time with the Page Program instruction. The device also can be

programmed to decrease total chip programming time with Auto

Address Increment (AAI) programming.

The sector protect/unprotect feature disables both program and

erase operations in any combination of the sectors of the

memory.

Elite Semiconductor Memory Technology Inc.

Publication Date: Jul. 2009

Revision: 1.3

1/32

12 3 4 5 6 7...32

中文翻译

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与F25L08PA_1相关器件

型号	品牌	获取价格	描述	数据表
F25L08PA-100DG	ESMT	获取价格	3V Only 8 Mbit Serial Flash Memory with Dual
F25L08PA-100DIG	ESMT	获取价格	3V Only 8 Mbit Serial Flash Memory with Dual
F25L08PA-100PAG	ESMT	获取价格	3V Only 8 Mbit Serial Flash Memory with Dual
F25L08PA-100PAIG	ESMT	获取价格	3V Only 8 Mbit Serial Flash Memory with Dual
F25L08PA-100PG	ESMT	获取价格	3V Only 8 Mbit Serial Flash Memory with Dual
F25L08PA-100PIG	ESMT	获取价格	3V Only 8 Mbit Serial Flash Memory with Dual
F25L08PA-50DG	ESMT	获取价格	3V Only 8 Mbit Serial Flash Memory with Dual
F25L08PA-50DIG	ESMT	获取价格	3V Only 8 Mbit Serial Flash Memory with Dual
F25L08PA-50PAG	ESMT	获取价格	3V Only 8 Mbit Serial Flash Memory with Dual
F25L08PA-50PAIG	ESMT	获取价格	3V Only 8 Mbit Serial Flash Memory with Dual

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