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F25L04UA PDF预览

F25L04UA

更新时间: 2024-01-07 20:10:54
品牌 Logo 应用领域
晶豪 - ESMT 闪存
页数 文件大小 规格书
25页 271K
描述
3V Only 4 Mbit Serial Flash Memory

F25L04UA 数据手册

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ESMT  
Flash  
F25L04UA  
3V Only 4 Mbit Serial Flash Memory  
„ FEATURES  
y
y
Single supply voltage 2.7~3.6V  
- Sector erase time 0.7s(typical)  
Speed  
y
y
Auto Address Increment (AAI) Programming  
- Decrease total chip programming time over  
Byte-Program operations  
- Read max frequency : 33MHz  
- Fast Read max frequency : 50MHz; 75MHz; 100MHz  
y
y
Low power consumption  
- Active current :40mA  
- Standby current : 25μ A  
SPI Serial Interface  
- SPI Compatible : Mode 0 and Mode3  
y
y
End of program or erase detection  
Write Protect ( WP )  
Reliability  
- 100,000 program/erase cycles typically  
- 10 years Data Retention  
y
y
Hold Pin (HOLD )  
y
y
Program  
- Byte program time 8μ s(typical)  
Package avalible  
- 8-pin SOIC 150-mil  
Erase  
- Chip erase time 11s(typical)  
ORDERING INFORMATION  
Part No.  
Speed  
Package  
COMMENTS  
Pb-free  
F25L04UA -50PG  
F25L04UA -75PG  
50MHz 8 lead SOIC  
75MHz 8 lead SOIC  
Pb-free  
F25L04UA -100PG 100MHz 8 lead SOIC  
Pb-free  
GENERAL DESCRIPTION  
The F25L04UA is a 4Megabit, 3V only CMOS Serial Flash  
memory device. ESMT’s memory devices reliably store memory  
data even after 100,000 program and erase cycles.  
erased individually without affecting the data in other sectors.  
Whole chip erase capabilities provide the flexibility to revise the  
data in the device.  
The F25L04UA features a sector erase architecture. The device  
memory array is divided into one 8K bytes, two 4K bytes, one  
16K bytes, one 32K bytes, and seven 64K bytes. Sectors can be  
The sector protect/unprotect feature disables both program and  
erase operations in any combination of the sectors of the  
memory.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Jan. 2009  
Revision: 1.2  
1/25  

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