Datasheet > F25L04PA-86PAG2D

F25L04PA-86PAG2D

更新时间： 2023-01-15 00:00:00

品牌	Logo	应用领域
晶豪 - ESMT		光电二极管
页数	文件大小	规格书
33页	328K
描述
Flash, 4MX1, PDSO8, 0.208 INCH, 1.27 MM PITCH, ROHS COMPLIANT, SOIC-8

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F25L04PA-86PAG2D 数据手册

ESMT

F25L04PA (2D)

Flash

3V Only 4 Mbit Serial Flash Memory

with Dual Output

 FEATURES



Single supply voltage 2.3~3.6V

Standard, Dual SPI



Erase

- Chip erase time 1 sec (typical)

- Block erase time 0.15 sec (typical)

- Sector erase time 30 ms (typical)



Speed

- Read max frequency: 33MHz

- Fast Read max frequency: 50MHz; 86MHz; 100MHz

- Fast Read Dual max frequency: 50MHz / 86MHz

(100MHz / 172MHz equivalent Dual SPI)



Page Programming

- 256 byte per programmable page

SPI Serial Interface

- SPI Compatible: Mode 0 and Mode 3

Low power consumption

- Active current: 20 mA

- Standby current: 25μ A



End of program or erase detection

Write Protect ( WP )

- Deep Power Down current: 10μ A



Reliability



Hold Pin (HOLD )

- 100,000 typical program/erase cycles

- 20 years Data Retention

All Pb-free products are RoHS-Compliant

Program

- Page programming time: 0.7 ms (typical)

 ORDERING INFORMATION

Product ID

Speed

Package

Comments

F25L04PA –50PG2D

F25L04PA –86PG2D

F25L04PA –100PG2D

F25L04PA –50PAG2D

F25L04PA –86PAG2D

50MHz

86MHz

100MHz

50MHz

86MHz

8-lead

SOIC

150 mil

200 mil

6x5 mm

Pb-free

8-lead

SOIC

Pb-free

F25L04PA –100PAG2D 100MHz

F25L04PA –50HG2D

F25L04PA –86HG2D

F25L04PA –100HG2D

50MHz

86MHz

100MHz

8-contact

WSON

 GENERAL DESCRIPTION

The F25L04PA is a 4Megabit, 3V only CMOS Serial Flash

memory device. The device supports the standard Serial

Peripheral Interface (SPI), and a Dual SPI. ESMT’s memory

devices reliably store memory data even after 100,000

programming and erase cycles.

is divided into 128 uniform sectors with 4K byte each; 8 uniform

blocks with 64K byte each. Sectors can be erased individually

without affecting the data in other sectors. Blocks can be erased

individually without affecting the data in other blocks. Whole chip

erase capabilities provide the flexibility to revise the data in the

device. The device has Sector, Block or Chip Erase but no page

erase.

The memory array can be organized into 2,048 programmable

pages of 256 byte each. 1 to 256 byte can be programmed at a

time with the Page Program instruction.

The sector protect/unprotect feature disables both program and

erase operations in any combination of the sectors of the

memory.

The device features sector erase architecture. The memory array

Elite Semiconductor Memory Technology Inc.

Publication Date: Aug. 2012

Revision: 1.4

1/33

12 3 4 5 6 7...33

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与F25L04PA-86PAG2D相关器件

型号	品牌	获取价格	描述	数据表
F25L04PA-86PG2D	ESMT	获取价格	Flash, 4MX1, PDSO8, 0.150 INCH, 1.27 MM PITCH, ROHS COMPLIANT, SOIC-8
F25L04UA	ESMT	获取价格	3V Only 4 Mbit Serial Flash Memory
F25L04UA-100CG	ESMT	获取价格	Flash, 512KX8, PDSO8, 0.150 INCH, LEAD FREE, SOIC-8
F25L04UA-100PG	ESMT	获取价格	3V Only 4 Mbit Serial Flash Memory
F25L04UA-50CG	ESMT	获取价格	Flash, 512KX8, PDSO8, 0.150 INCH, LEAD FREE, SOIC-8
F25L04UA-50PG	ESMT	获取价格	3V Only 4 Mbit Serial Flash Memory
F25L04UA-75CG	ESMT	获取价格	Flash, 512KX8, PDSO8, 0.150 INCH, LEAD FREE, SOIC-8
F25L04UA-75PG	ESMT	获取价格	3V Only 4 Mbit Serial Flash Memory
F25L08PA	ESMT	获取价格	3V Only 8 Mbit Serial Flash Memory with Dual
F25L08PA_1	ESMT	获取价格	3V Only 8 Mbit Serial Flash Memory with Dual

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