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F1GF

更新时间: 2024-03-03 10:09:05
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
5页 246K
描述
SMAF

F1GF 数据手册

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RoHS  
F1AF THRU F1MF  
COMPLIANT  
Surface Mount Fast Recovery Rectifier  
Features  
Low profile package  
Ideal for automated placement  
Glass passivated chip junction  
High forward surge capability  
Fast reverse recovery time  
Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
Typical Applications  
For use in high frequency rectification of power supplies,  
inverters, converters, and freewheeling diodes for consumer,  
and telecommunication.  
Mechanical Data  
ackage: SMAF  
P
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant, halogen-free  
Terminals: Tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
Cathode line denotes the cathode end  
Polarity:  
(T =25Unless otherwise specified  
Maximum Ratings  
a
F1AF  
F1AF  
50  
F1BF  
F1BF  
100  
F1DF  
F1DF  
200  
F1GF  
F1GF  
400  
F1JF  
F1JF  
600  
F1KF  
F1KF  
800  
F1MF  
F1MF  
1000  
700  
PARAMETER  
SYMBOL  
UNIT  
Device marking code  
V
V
V
V
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
RRM  
V
35  
70  
140  
280  
420  
560  
RMS  
V
50  
100  
200  
400  
600  
800  
1000  
Maximum DC blocking Voltage  
DC  
Average rectified output current  
I
A
1.0  
30  
O
@60Hz sine wave, resistance load, TL (Fig.1)  
Forward Surge Current (Non-repetitive)  
@60Hz Half-sine wave,1 cycle, Tj=25  
Forward Surge Current (Non-repetitive)  
IFSM  
A
60  
@1ms, square wave, 1 cycle, Tj=25℃  
Current squared time  
@1mst8.3ms Tj=25℃  
A2s  
I2t  
3.735  
T
-55 ~ +150  
-55 ~ +150  
Storage temperature  
stg  
T
j
Junction temperature  
T =25Unless otherwise specified)  
Electrical Characteristics  
a
F1AF  
F1BF  
F1DF  
F1GF  
F1JF  
F1KF  
F1MF  
PARAMETER  
SYMBOL  
UNIT  
TEST CONDITIONS  
Maximum instantaneous  
forward voltage  
V
I
FM  
=1.0A  
V
1.3  
F
IF=0.5A,IR=1.0A,  
Irr=0.25A  
Maximum reverse recovery time  
trr  
ns  
150  
250  
500  
5.0  
T =25℃  
j
Maximum DC reverse current at  
rated DC blocking voltage  
I
μA  
R
100  
T =125℃  
j
Measured at 1MHz and  
Applied Reverse  
Typical junction capacitance  
Cj  
pF  
11  
7
Voltage of 4.0 V.D.C  
1 / 5  
S-S032  
Rev. 2.5, 23-Nov-21  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  

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