Datasheet > F1120

F1120

更新时间： 2024-02-27 12:32:24

品牌	Logo	应用领域
POLYFET		晶体晶体管栅
页数	文件大小	规格书
2页	48K
描述
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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F1120 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.76	配置：	Single
最大漏极电流 (Abs) (ID)：	8 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	200 °C
极性/信道类型：	N-CHANNEL	子类别：	FET General Purpose Power
Base Number Matches：	1

F1120 数据手册

polyfet rf devices

F1120

General Description

PATENTED GOLD METALIZED

SILICON GATE ENHANCEMENT MODE

RF POWER VDMOS TRANSISTOR

Silicon VDMOS and LDMOS

transistors designed specifically

for broadband RF applications.

Suitable for Military Radios,

Cellular and Paging Amplifier Base

Stations, Broadcast FM/AM, MRI,

200Watts Gemini

Package Style AR

Laser Driver and others.

"Polyfet" process features

gold metal for greatly extended

lifetime. Low output capacitance

and high Ft enhance broadband

performance

HIGH EFFICIENCY, LINEAR,

HIGH GAIN, LOW NOISE

ABSOLUTE MAXIMUM RATINGS (TC = 25 C)

Total

Junction to

Maximum

Junction

Temperature

Storage

DC Drain

Current

Drain to

Gate

Voltage

Drain to

Source

Voltage

Gate to

Source

Voltage

Device

Dissipation

Case Thermal

Resistance

Temperature

440 Watts

0.4

20 A

70 V

70V

C/W

200 C

-65 C to 150 C

30V

RF CHARACTERISTICS ( 200 WATTS OUTPUT )

SYMBOL

Gps

PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Common Source Power Gai

Drain Efficienc

Idq = 2 A, Vds = 28.0 V, F = 175 MHz

VSWR

Load Mismatch Toleranc

20:1

Relative Idq = 2 A, Vds = 28.0 V, F = 175 MHz

ELECTRICAL CHARACTERISTICS (EACH SIDE)

SYMBOL

Bvdss

Idss

PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Ids = 0.25 A,

Vds = 28.0V, Vgs = 0V

Drain Breakdown Voltag

Zero Bias Drain Curren

Vgs = 0V

Igss

Gate Leakage Curren

Vds = 0 V,

Vgs = 30V

Vgs = Vds

Vgs

Gate Bias for Drain Curren

Forward Transconductanc

Saturation Resistanc

Ids = 0.5 A,

Mho

Ohm

Amp

0.18

Vds = 10V, Vgs = 5V

Rdson

Idsat

Ciss

Vgs = 20V, Ids = 20A

Saturation Curren

Vgs = 20V, Vds = 10V

Common Source Input Capacitanc

Common Source Feedback Capacitanc

Common Source Output Capacitanc

200

Vds = 28.0 V, Vgs = 0V, F = 1 MHz

Crss

Coss

150

REVISION 1/12/98

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com

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