Datasheet > F1108

F1108

更新时间： 2024-02-02 20:48:21

品牌	Logo	应用领域
POLYFET		晶体晶体管栅
页数	文件大小	规格书
2页	44K
描述
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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技术参数
数据手册

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F1108 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.74	配置：	Single
最大漏极电流 (Abs) (ID)：	8 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	200 °C
极性/信道类型：	N-CHANNEL	子类别：	FET General Purpose Power
Base Number Matches：	1

F1108 数据手册

polyfet rf devices

F1108

General Description

PATENTED GOLD METALIZED

SILICON GATE ENHANCEMENT MODE

RF POWER VDMOS TRANSISTOR

Silicon VDMOS and LDMOS

transistors designed specifically

for broadband RF applications.

Suitable for Military Radios,

Cellular and Paging Amplifier Base

Stations, Broadcast FM/AM, MRI,

Laser Driver and others.

80Watts Gemini

Package Style AK

"Polyfet" process features

gold metal for greatly extended

lifetime. Low output capacitance

HIGH EFFICIENCY, LINEAR,

HIGH GAIN, LOW NOISE

and high F enhance broadband

performance

ABSOLUTE MAXIMUM RATINGS (TC = 25 C)

Total

Junction to

Case Thermal

Resistance

Maximum

Junction

Temperature

Storage

DC Drain

Current

Drain to

Gate

Voltage

Drain to

Source

Voltage

Gate to

Source

Voltage

Device

Dissipation

Temperature

170 Watts

0.95

8 A

70 V

70V

C/W

200 C

-65 C to 150 C

30V

RF CHARACTERISTICS (

80WATTS OUTPUT )

SYMBOL

Gps

PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Common Source Pow er Gain

Drain Efficiency

Idq = 0.8 A, Vds =28.0V, F = 400 MHz

VSWR

Load Mismatch Tolerance

20:1

Relative Idq = 0.8 A, Vds =28.0V, F = 400 MHz

ELECTRICAL CHARACTERISTICS (EACH SIDE)

SYMBOL

Bvdss

Idss

PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Ids = 0.1 A,

Drain Breakdow n Voltage

Zero Bias Drain Current

Vgs = 0V

Vds = 28.0V, Vgs = 0V

Vds = 0 V, Vgs = 30V

Igss

Gate Leakage Current

Vgs

Gate Bias for Drain Current

Forw ard Transconductance

Saturation Resistance

Ids = 0.2 A, Vgs = Vds

Vds = 10V, Vgs = 5V

Mho

Ohm

Amp

0.7

Rdson

Idsat

Ciss

Vgs = 20V, Ids = 8A

Saturation Current

Vgs = 20V, Vds = 10V

Common Source Input Capacitance

Common Source Feedback Capacitance

Common Source Output Capacitance

Vds = 28.0 V, Vgs = 0V, F = 1 MHz

Crss

Coss

REVISION 8/1/97

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:w w w .polyfet.com

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