Datasheet > F1001C

F1001C

更新时间： 2024-02-02 13:24:42

品牌	Logo	应用领域
POLYFET		晶体晶体管栅
页数	文件大小	规格书
2页	37K
描述
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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技术参数
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F1001C 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.76	配置：	Single
最大漏极电流 (Abs) (ID)：	2 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	200 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	50 W
子类别：	FET General Purpose Power	表面贴装：	NO
Base Number Matches：	1

F1001C 数据手册

polyfet rf devices

F1001C

General Description

PATENTED GOLD METALIZED

SILICON GATE ENHANCEMENT MODE

RF POWER VDMOS TRANSISTOR

Silicon VDMOS and LDMOS

transistors designed specifically

for broadband RF applications.

Suitable for Military Radios,

Cellular and Paging Amplifier

Base Stations, Broadcast FM/AM,

MRI, Laser Driver and others.

20Watts Single Ended

Package Style AC

"Polyfet" process features

gold metal for greatly extended

lifetime. Low output capacitance

HIGH EFFICIENCY, LINEAR,

HIGH GAIN, LOW NOISE

and high F enhance broadband

performance

ABSOLUTE MAXIMUM RATINGS (TC = 25 C)

Total

Junction to

Maximum

Junction

Temperature

Storage

DC Drain

Current

Drain to

Gate

Voltage

Drain to

Source

Voltage

Gate to

Source

Voltage

Device

Dissipation

Case Thermal

Resistance

Temperature

50Watts

3.13

2 A

70 V

70V

C/W

200 C

-65 C to 150 C

30V

RF CHARACTERISTICS (

20WATTS OUTPUT )

SYMBOL

Gps

PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Common Source Power Gain

Drain Efficiency

Idq = 0.2 A, Vds = 28.0V, F = 175MHz

VSWR

Load Mismatch Tolerance

20:1

Relative Idq = 0.2 A, Vds = 28.0V, F = 175MHz

ELECTRICAL CHARACTERISTICS (EACH SIDE)

SYMBOL

Bvdss

Idss

PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Ids = 0.05A,

Vds = 28.0 V, Vgs = 0V

Drain Breakdown Voltage

Zero Bias Drain Current

Vgs = 0V

Igss

Gate Leakage Current

Vds = 0 V,

Vgs = 30V

Vgs = Vds

Vgs

Gate Bias for Drain Current

Forward Transconductance

Saturation Resistance

Ids = 0.1 A,

Mho

Ohm

Amp

0.8

Vds = 10V, Vgs = 5V

Rdson

Idsat

Ciss

Vgs = 20V, Ids = 4A

Saturation Current

5.5

Vgs = 20V, Vds = 10V

Common Source Input Capacitance

Common Source Feedback Capacitance

Common Source Output Capacitance

Vds = 28.0V, Vgs = 0V, F = 1 MHz

Vds = 28.0 V, Vgs = 0V, F = 1 MHz

Vds = 28.0V, Vgs = 0V, F = 1 MHz

Crss

Coss

REVISION 8/1/97

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com

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与F1001C相关器件

型号	品牌	获取价格	描述	数据表
F1002	POLYFET	获取价格	PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F1003	POLYFET	获取价格	PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F100302DCQB	ETC	获取价格	Quint 2-input OR/NOR Gate
F100302DMQR	NSC	获取价格	IC,LOGIC GATE,5 2-INPUT OR/NOR,ECL100,DIP,24PIN,CERAMIC
F100302FCQB	NSC	获取价格	IC,LOGIC GATE,5 2-INPUT OR/NOR,ECL100,QFL,24PIN,CERAMIC
F100302FMQR	NSC	获取价格	IC,LOGIC GATE,5 2-INPUT OR/NOR,ECL100,QFL,24PIN,CERAMIC
F100302FMQR	TI	获取价格	F100302FMQR
F100302PC	TI	获取价格	100K SERIES, 5 2-INPUT OR/NOR GATE, PDIP24, DIP-24
F100304	NSC	获取价格	LOW POWER QUINT AND / NAND GATE
F100314	NSC	获取价格	LOW POWER QUINT DIFFERENTIAL LINE RECEIVER

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