Datasheet > F00019D_15

F00019D_15

更新时间： 2022-02-26 13:02:01

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	177K
描述
N-Channel Power MOSFET

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F00019D_15 数据手册

SFF130/5

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

8 AMP / 100 Volts

0.18 Ω

Part Number / Ordering Information ^1/

SFF130 __ __

N-Channel Power MOSFET

Screening ^2/

│

└

__ = Not Screen

TX = TX Level

TXV = TXV Level

S = S Level

Features:

• Rugged Construction with Poly Silicon Gate

• Low R_DS(ON)and High Transconductance

• Excellent High Temperature Stability

• Very Fast Switching Speed

Package

/5= TO-5

• Fast Recovery and Superior dV/dt Performance

• Increased Reverse Energy Capability

• Low Input and Transfer Capacitance for Easy Paralleling

• Hermetically Sealed Package

• Available in both hot case and isolated versions

• Ideal for low power applications

• TX, TXV, Space Level Screening Available

• Replacement for IRFF130 Types

TO-5

Maximum Ratings ^3/

Symbol

Value

Units

Drain – Source Voltage

Gate – Source Voltage

V_DS

V_GS

100

±20

Volts

T_C= 25ºC

Continuous Collector Current

I_D

Amps

T_C= 100ºC

T_C= 25ºC

Power Dissipation

P_D

Watts

ºC

T_A= 25ºC

Operating & Storage Temperature

Top & Tstg

-55 to +150

Thermal Resistance

ºC/W

R_θJC

E_AS

Junction to Case

Single Pulse Avalanche Energy

NOTES:

TO-5 Case Outline:

1/ For Ordering Information, Price, Operating

Curves, and Availability- Contact Factory.

2/ Screened to MIL-PRF-19500.

3/ Unless Otherwise Specified, All Maximum

Ratings and Electrical Characteristics @25ºC.

NOTE: All specifications are subject to change without notification.

DATA SHEET #: F00019D

DOC

SCD's for these devices should be reviewed by SSDI prior to release.

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