FMM5704X
36-40GHz LNA MMIC
FEATURES
• Low Noise Figure: NF = 2.0dB (Typ.) @ f=40 GHz
• High Associated Gain: G = 18dB (Typ.) @ f=40 GHz
as
• Wide Frequency Band: 36-40 GHz
• High Output Power: 9dBm (Typ.) @ f=40 GHz
• Impedance Matched Zin/Zout = 50Ω
DESCRIPTION
The FMM5704X is a LNA MMIC designed for
applications in the 36-40 GHz frequency range.
This product is well suited for satellite communications,
radio link, and applications where low noise and high
dynamic range are required.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Input Power
Symbol
Condition
Unit
V
Rating
V
4
DD
P
-3
dBm
in
Storage Temperature
T
-65 to +175
-45 to +125
stg
°C
°C
T
Operating Backside Temperature
op
Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (V ) should not exceed 3 volts.
DD
2. This product should be hermetically packaged.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Limits
Typ.
Item
Symbol
Conditions (2)
Unit
Min.
Max.
NF
Noise Figure
-
2.0
2.5
20
dB
G
Associated Gain
15
18
dB
as
V
= 3V
DD
f = 40GHz
= 20mA (Typ.)
I
DD
Z = Z = 50Ω
Output Power at 1dB G.C.P.
Input Return Loss
P1dB
-
-
-
9
-
-
-
dBm
dB
S
L
RL
-10
-10
in
Output Return Loss
RL
dB
out
Note 1: RF parameter sample size 10pcs. Criteria (accept/reject)=(0/1)
Note 2: Electrical Characteristics specified with RF-probe measurement.
Edition 1.0
December 2000
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