Datasheet > FMM5117X

FMM5117X

更新时间： 2024-01-21 21:49:12

品牌	Logo	应用领域
EUDYNA		射频微波
页数	文件大小	规格书
4页	639K
描述
20-32GHz Downconverter MMIC

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技术参数
数据手册

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FMM5117X 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.24	Is Samacsys：	N
其他特性：	HIGH RELIABILITY	构造：	COMPONENT
下变频增益-最小值：	18 dB	最大中频频率：	3000 MHz
最小中频频率：	100 MHz	输入功率最小值（CW）：	0.1 dBm
LO 可调谐：	YES	最高工作温度：	110 °C
最低工作温度：	-45 °C	最大射频输入频率：	32000 MHz
最小射频输入频率：	20000 MHz	射频/微波设备类型：	DOWN CONVERTER
Base Number Matches：	1

FMM5117X 数据手册

FMM5117X

20-32GHz Downconverter MMIC

FEATURES

• Integrated Monolithic Downconverter

• High Linearity

• Single Supply Voltage Operation

• High Reliability

DESCRIPTION

The FMM5117X is a double, single balanced diode mixer

downconverter designed for applications in the 20 to 32GHz

frequency range. The device consists of a low noise mixer,

LO amplifier, and LO frequency doubler. This downconverter is uniquely suited for point-to-point radios,

local multi-point distribution systems (LMDS) and satellite communications, as it offers a

high dynamic range over a large bandwidth.

ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)

Parameter

Symbol

Rating

Unit

DD1,2

DC Supply Voltage

Input Power

dBm

°C

inRF

Input Power

inLO

Storage Temperature

-65 to +175

stg

RECOMMENDED OPERATING CONDITIONS

Item Symbol

DC Supply Voltage

Recommend

Unit

Min.

Max.

Typ.

5.0

3.0

DD1,2

0.0

-45

5.0

dBm

°C

Input LO Power Level

inLO

Tbs

Operating Backside Temperature

110

Note 1: This product should be hermetically packaged.

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

Limits

Item

Symbol

Conditions

Unit

Min.

Max.

Typ.

GHz

RF Frequency Range

LO Frequency Range

IF Frequency Range (Note 2)

Conversion Gain

9.5

0.1

-18

16.5

-10

Conversion Gain Flatness

∆G

(fixed f , swept f ) (f =1.0GHz)

=5V,

=0V,

=3dBm,

=0dBm

DD1,2

Conversion Gain Flatness

(fixed f , swept f ) (f =13.5GHz)

RL , RL

Return Loss (RF/LO)

Return Loss (IF)

Input P1dB at RF Port

P1dB

dBm

RFIN

3rd Order Input Intercept Point

DC Current Consumption

RF Current Consumption

IIP3

100

140

150

200

Note 1: The electrical characteristics are measured on a sample basis at 10pcs./wafer. Criteria: (accept/reject)=(0/1)

Note 2: The IF frequency range is dependent on the selected LO and RF frequency.

Edition 1.3

May 2003

12 3 4

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