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FMM5116X PDF预览

FMM5116X

更新时间: 2024-01-06 20:59:52
品牌 Logo 应用领域
EUDYNA 射频微波
页数 文件大小 规格书
4页 831K
描述
20-32GHz Upconverter MMIC

FMM5116X 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.6
Base Number Matches:1

FMM5116X 数据手册

 浏览型号FMM5116X的Datasheet PDF文件第2页浏览型号FMM5116X的Datasheet PDF文件第3页浏览型号FMM5116X的Datasheet PDF文件第4页 
FMM5116X  
20-32GHz Upconverter MMIC  
FEATURES  
• Integrated Monolithic Upconverter  
• High Linearity  
• Single Supply Voltage Operation  
• High Reliability  
DESCRIPTION  
The FMM5116X is a double, single balanced diode mixer  
upconverter designed for applications in the 20 to 32GHz  
frequency range. The device consists of a low noise mixer,  
LO amplifier, and LO frequency doubler. This upconverter is  
uniquely suited for point-to-point radios, local multi-point distribution systems (LMDS)  
and satellite communications, as it offers a high dynamic range over a large bandwidth.  
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)  
Parameter  
Symbol  
Rating  
Unit  
V
V
DD1,2  
DC Supply Voltage  
8
Input Power  
P
20  
10  
dBm  
dBm  
°C  
inIF  
Input Power  
P
inLO  
Storage Temperature  
T
-65 to +175  
stg  
RECOMMENDED OPERATING CONDITIONS  
Item Symbol  
DC Supply Voltage  
Recommend  
Unit  
Min.  
Max.  
Typ.  
5.0  
3.0  
25  
V
DD1,2  
V
P
0.0  
-45  
5.0  
dBm  
°C  
Input LO Power Level  
inLO  
Tbs  
Operating Backside Temperature  
110  
Note 1: This product should be hermetically packaged.  
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)  
Limits  
Item  
Symbol  
Conditions  
Unit  
Min.  
20  
Max.  
Typ.  
f
-
-
32  
16.5  
3
GHz  
GHz  
RF Frequency Range  
LO Frequency Range  
IF Frequency Range (Note 2)  
Conversion Gain  
RF  
f
LO  
9.5  
f
0.1  
-18  
-
GHz  
dB  
IF  
G
-10  
-
Conversion Gain Flatness  
-
-
G  
-
-
3
2
dB  
dB  
V
V
P
=5V,  
=0V,  
=3dBm,  
(fixed f , swept f ) (f =1.0GHz)  
DD1,2  
IF  
LO  
IF  
GG  
Conversion Gain Flatness  
(fixed f , swept f ) (f =13.5GHz)  
G  
LO  
LO  
IF  
LO  
P =0dBm  
IF  
RL , RL  
-
Return Loss (RF/LO)  
Return Loss (IF)  
-
-
-
-
-
-
dB  
dB  
12  
4
RF  
LO  
RL  
-
-
IF  
Input P1dB at IF Port  
P1dB  
15  
23  
dBm  
dBm  
mA  
IFIN  
3rd Order Input Intercept Point  
DC Current Consumption  
RF Current Consumption  
IIP3  
-
I
100  
140  
150  
200  
DC  
I
RF  
mA  
Note 1: The electrical characteristics are measured on a sample basis at 10pcs./wafer. Criteria: (accept/reject)=(0/1)  
Note 2: The IF frequency range is dependent on the selected LO and RF frequency.  
Edition 1.3  
May 2003  
1

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