FMM3117VN Datasheet Rev. B2
April, 2004
FMM3117VN
12.5Gbps Dual-drive LN Modulator Driver IC
1. Features
1) High Speed Operation up to 12.5Gbps
2) On-chip 50 ohm Termination for High Speed Data Input
3) Rapid Rise/Fall Time : 25ps (Typ., 20-80%)
4) Adjustable Output Voltage Swing :2.0Vpp to 2.85Vpp (50ohm Load)
5) Adjustable Output Offset Level
6) Single Power Supply Voltage : -5.2V
7) Duty Ratio Adjustment
8) 6mm x 6mm 32-pin Hermetically Sealed Ceramic Package
2. Maximum Ratings
The semiconductor devices can be permanently damaged by application of stress (voltage,
current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. The
normal logic operation is not assured even within the ratings.
Table 2-1. Maximum Ratings
Parameter
Supply Voltage
Symbol
Value
Unit
Vss
Vin
-6.50 to 0.0
-2.0 to 0.5
500
V
V
Input Voltage
Power Supply Current
Output Swing Control Voltage
Output Offset Control Voltage
Output Offset Control Current
Duty Control Voltage
Iss
mA
V
Vip
Vss-0.5 to Vss+2.2
-8.0 to 0.5
50
VIB1,VIB2
IB1,IB2
Vdut
Vout
Tstg
V
mA
V
Vss-0.5 to Vss+2.2
-3.1 to 0.5
-55 to 125
Output Voltage
V
Storage Temperature
degC
This device contains Gallium Arsenide(GaAs).
For safety, please observe the following:
(1) Do not put devices in your mouth. Gallium Arsenide is
dangerous if ingested.
!
(2) Do not burn, crush, or process chemically. It is dangerous to
inhale or ingest the gas, powder, or liquid which results from
burning, crushing or chemical processing of the devices.
(3) Discard devices separately from industrial and domestic wastes
in accordance with the method specified by law.
GaAs
CAUTION
1
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