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FLX257XV PDF预览

FLX257XV

更新时间: 2024-02-23 20:40:51
品牌 Logo 应用领域
EUDYNA 晶体晶体管
页数 文件大小 规格书
4页 58K
描述
GaAs FET & HEMT Chips

FLX257XV 技术参数

生命周期:Transferred零件包装代码:DIE
包装说明:UNCASED CHIP, R-XUUC-N针数:18
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.26其他特性:HIGH RELIABILITY
配置:SINGLE最小漏源击穿电压:15 V
FET 技术:JUNCTION最高频带:X BAND
JESD-30 代码:R-XUUC-N元件数量:1
工作模式:DEPLETION MODE最高工作温度:175 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:UNCASED CHIP极性/信道类型:N-CHANNEL
功耗环境最大值:15 W认证状态:Not Qualified
子类别:FET RF Small Signal表面贴装:YES
端子形式:NO LEAD端子位置:UPPER
晶体管元件材料:GALLIUM ARSENIDEBase Number Matches:1

FLX257XV 数据手册

 浏览型号FLX257XV的Datasheet PDF文件第2页浏览型号FLX257XV的Datasheet PDF文件第3页浏览型号FLX257XV的Datasheet PDF文件第4页 
FLX257XV  
GaAs FET & HEMT Chips  
FEATURES  
High Output Power: P  
= 33.5dBm(Typ.)  
1dB  
High Gain: G  
High PAE: η  
= 7.5dB(Typ.)  
= 31%(Typ.)  
1dB  
add  
Proven Reliability  
Drain  
Drain  
Drain  
Drain  
DESCRIPTION  
Gate  
Gate  
Gate  
The FLX257XV chip is a power GaAs FET that is  
designed for general purpose applications in the X-Band  
frequency range as it provides superior power, gain, and  
efficiency.  
Eudyna’s stringent Quality Assurance Program assures the  
highest reliability and consistent performance.  
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)  
Item  
Symbol  
Condition  
Unit  
Rating  
Drain-Source Voltage  
Gate-Source Voltage  
V
DS  
V
GS  
15  
-5  
V
V
P
T
T = 25°C  
c
Total Power Dissipation  
Storage Temperature  
15.0  
W
°C  
°C  
tot  
-65 to +175  
175  
stg  
T
Channel Temperature  
ch  
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:  
1. The drain-source operating voltage (V ) should not exceed 10 volts.  
DS  
2. The forward and reverse gate currents should not exceed 17.8 and -1.2 mA respectively with  
gate resistance of 200.  
3. The operating channel temperature (T ) should not exceed 145°C.  
ch  
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)  
Limit  
Typ.  
Item  
Symbol  
Test Conditions  
Unit  
Min.  
Max.  
V
V
V
I
= 5V, V  
= 0V  
GS  
Saturated Drain Current  
Transconductance  
I
-
1000 1500  
mA  
DS  
DS  
DS  
DSS  
g
-
= 5V, I  
= 600mA  
= 50mA  
m
-
600  
mS  
V
DS  
Pinch-off Voltage  
V
= 5V, I  
DS  
-1.0 -2.0  
-3.5  
-
p
Gate Source Breakdown Voltage  
V
-
= -50µA  
-5  
V
GSO  
GS  
Output Power at 1dB  
Gain Compression Point  
P
32.5 33.5  
1dB  
-
-
dBm  
V
= 10V  
DS  
Power Gain at 1dB  
Gain Compression Point  
I
0.6I  
DS  
DSS  
6.5  
7.5  
dB  
G
1dB  
f = 10GHz  
η
-
Power-added Efficiency  
Thermal Resistance  
-
-
31  
8
%
add  
R
10  
Channel to Case  
°C/W  
th  
Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)  
The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.  
Edition 1.4  
October 2004  
1

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