FLX257XV
GaAs FET & HEMT Chips
FEATURES
• High Output Power: P
= 33.5dBm(Typ.)
1dB
• High Gain: G
• High PAE: η
= 7.5dB(Typ.)
= 31%(Typ.)
1dB
95
40
add
(Unit: µm)
• Proven Reliability
Drain
Drain
Drain
Drain
DESCRIPTION
Gate
Gate
Gate
The FLX257XV chip is a power GaAs FET that is
designed for general purpose applications in the X-Band
frequency range as it provides superior power, gain, and
efficiency.
Eudyna’s stringent Quality Assurance Program assures the
highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Unit
Rating
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
15
-5
V
V
P
T
T = 25°C
c
Total Power Dissipation
Storage Temperature
15.0
W
°C
°C
tot
-65 to +175
175
stg
T
Channel Temperature
ch
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (V ) should not exceed 10 volts.
DS
2. The forward and reverse gate currents should not exceed 17.8 and -1.2 mA respectively with
gate resistance of 200Ω.
3. The operating channel temperature (T ) should not exceed 145°C.
ch
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Limit
Typ.
Item
Symbol
Test Conditions
Unit
Min.
Max.
V
V
V
I
= 5V, V
= 0V
GS
Saturated Drain Current
Transconductance
I
-
1000 1500
mA
DS
DS
DS
DSS
g
-
= 5V, I
= 600mA
= 50mA
m
-
600
mS
V
DS
Pinch-off Voltage
V
= 5V, I
DS
-1.0 -2.0
-3.5
-
p
Gate Source Breakdown Voltage
V
-
= -50µA
-5
V
GSO
GS
Output Power at 1dB
Gain Compression Point
P
32.5 33.5
1dB
-
-
dBm
V
= 10V
DS
Power Gain at 1dB
Gain Compression Point
I
≈ 0.6I
DS
DSS
6.5
7.5
dB
G
1dB
f = 10GHz
η
-
Power-added Efficiency
Thermal Resistance
-
-
31
8
%
add
R
10
Channel to Case
°C/W
th
Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)
The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.
Edition 1.4
October 2004
1