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FLX107MH-12 PDF预览

FLX107MH-12

更新时间: 2024-01-01 20:11:32
品牌 Logo 应用领域
EUDYNA 晶体晶体管放大器局域网
页数 文件大小 规格书
4页 93K
描述
X, Ku Band Power GaAs FET

FLX107MH-12 技术参数

生命周期:Contact Manufacturer包装说明:FLANGE MOUNT, R-CDFM-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.26
Is Samacsys:N其他特性:HIGH RELIABILITY
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:15 VFET 技术:JUNCTION
最高频带:KU BANDJESD-30 代码:R-CDFM-F2
元件数量:1端子数量:2
工作模式:DEPLETION MODE封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:GALLIUM ARSENIDEBase Number Matches:1

FLX107MH-12 数据手册

 浏览型号FLX107MH-12的Datasheet PDF文件第2页浏览型号FLX107MH-12的Datasheet PDF文件第3页浏览型号FLX107MH-12的Datasheet PDF文件第4页 
FLX107MH-12  
X, Ku Band Power GaAs FET  
FEATURES  
• High Output Power: P  
= 30.0dBm(Typ.)  
1dB  
• High Gain: G  
= 7.5dB(Typ.)  
= 33%(Typ.)  
1dB  
• High PAE: η  
add  
• Proven Reliability  
• Hermetic Metal/Ceramic Package  
DESCRIPTION  
The FLX107MH-12 is a power GaAs FET that is designed for general  
purpose applications in the X-Band frequency range as it provides  
superior power, gain, and efficiency.  
Fujitsu’s stringent Quality Assurance Program assures the highest  
reliability and consistent performance.  
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)  
Item  
Symbol  
Condition  
Unit  
Rating  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
15  
-5  
V
V
DS  
GS  
T = 25°C  
c
Total Power Dissipation  
Storage Temperature  
Channel Temperature  
P
7.5  
-65 to +175  
175  
W
°C  
°C  
T
T
stg  
T
ch  
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:  
1. The drain-source operating voltage (V ) should not exceed 10 volts.  
DS  
2. The forward and reverse gate currents should not exceed 8.8 and -0.5 mA respectively with  
gate resistance of 500.  
3. The operating channel temperature (T ) should not exceed 145°C.  
ch  
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)  
Limit  
Typ.  
Item  
Symbol  
Test Conditions  
Unit  
Min.  
Max.  
V
V
V
I
= 5V, V  
= 0V  
GS  
Saturated Drain Current  
Transconductance  
I
-
-
400  
600  
-
mA  
DS  
DS  
DS  
DSS  
g
= 5V, I  
= 250mA  
= 20mA  
200  
m
mS  
V
DS  
Pinch-off Voltage  
V
= 5V, I  
DS  
-1.0  
-5  
-2.0 -3.5  
p
Gate Source Breakdown Voltage  
Output Power at 1dB G.C.P.  
V
-
-
-
V
= -20µA  
GSO  
GS  
P
29.0 30.0  
dBm  
dB  
1dB  
V
= 10V,  
DS  
Power Gain at 1dB G.C.P.  
Power-added Efficiency  
G
6.5  
7.5  
33  
15  
-
I
= 0.6 I  
1dB  
DS  
DSS (Typ.),  
f = 12.5 GHz  
η
add  
-
-
-
%
R
Thermal Resistance  
Channel to Case  
20  
°C/W  
th  
CASE STYLE: MH  
G.C.P.: Gain Compression Point  
Edition 1.1  
August 1999  
1

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