FLM5359-18F
C-Band Internally Matched FET
FEATURES
• High Output Power: P
= 43.0dBm (Typ.)
1dB
• High Gain: G
= 8.5dB (Typ.)
1dB
= 35% (Typ.)
• High PAE: η
• Low IM = -46dBc@Po = 32.0dBm
add
3
• Broad Band: 5.3 ~ 5.9GHz
• Impedance Matched Zin/Zout = 50Ω
DESCRIPTION
The FLM5359-18F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Unit
Rating
Drain-Source Voltage
Gate-Source Voltage
V
V
15
-5
V
V
DS
GS
T = 25°C
c
Total Power Dissipation
Storage Temperature
Channel Temperature
P
83.3
-65 to +175
175
W
°C
°C
T
T
stg
T
ch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (V ) should not exceed 10 volts.
DS
2. The forward and reverse gate currents should not exceed 26.0 and -11.6 mA respectively with
gate resistance of 25Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Limit
Typ.
Item
Symbol
Test Conditions
Unit
Min.
Max.
V
V
V
= 5V, V
= 0V
GS
Saturated Drain Current
Transconductance
I
-
9.0
13.5
-
A
mS
V
DS
DS
DS
DSS
g
= 5V, I
= 4800mA
-
4000
m
DS
Pinch-off Voltage
V
= 5V, I
DS
= 480mA
-1.0
-5.0
-2.0 -3.5
p
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
V
-
-
-
-
V
I
= -480µA
GSO
GS
P
42.0 43.0
dBm
1dB
Power Gain at 1dB G.C.P.
Drain Current
V
=10V,
G
7.5
8.5
dB
mA
%
DS
1dB
I
= 0.55 I
DS
DSS (Typ.),
I
-
-
-
4800 6000
dsr
f = 5.3 ~ 5.9 GHz,
η
Power-added Efficiency
Gain Flatness
add
35
-
-
Z =Z = 50 ohm
S
L
∆G
0.6
dB
f = 5.9 GHz, ∆f = 10 MHz
3rd Order Intermodulation
Distortion
2-Tone Test
IM
3
-44
-46
-
dBc
P
= 32.0dBm S.C.L.
out
R
Thermal Resistance
Channel Temperature Rise
CASE STYLE: IK
Channel to Case
-
-
1.6
-
1.8
80
°C/W
°C
th
∆T
10V x I
x R
th
ch
dsr
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.3
August 2004
1