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FLM4450-45F PDF预览

FLM4450-45F

更新时间: 2024-01-20 18:31:05
品牌 Logo 应用领域
EUDYNA /
页数 文件大小 规格书
5页 201K
描述
C-Band Internally Matched FET

FLM4450-45F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:FLANGE MOUNT, R-CDFM-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.39
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:12 V最大漏极电流 (ID):10 A
FET 技术:JUNCTION最高频带:C BAND
JESD-30 代码:R-CDFM-F2元件数量:1
端子数量:2工作模式:DEPLETION MODE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:GALLIUM ARSENIDE

FLM4450-45F 数据手册

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FLM4450-45F  
C-Band Internally Matched FET  
FEATURES  
High Output Power: P1dB=46.5dBm(Typ.)  
High Gain: G1dB=10.0dB(Typ.)  
High PAE: ηadd=41%(Typ.)  
Broad Band: 4.4~5.0GHz  
Impedance Matched Zin/Zout = 50Ω  
Hermetically Sealed Package  
DESCRIPTION  
The FLM4450-45F is a power GaAs FET that is internally matched  
for standard communication bands to provide optimum power and  
gain in a 50system.  
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25°C)  
Item  
Symbol  
Rating  
Unit  
Drain-Source Voltage  
VDS  
VGS  
15  
-5  
115.4  
V
V
W
Gate-Source Voltage  
Total Power Dissipation  
Storage Temperature  
Channel Temperature  
PT  
Tstg  
o
-65 to +175  
175  
C
o
Tch  
C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25°C)  
Item  
Symbol  
VDS  
Unit  
Condition  
Limit  
12  
DC Input Voltage  
Forward Gate Current  
Reverse Gate Current  
V
mA  
mA  
IGF  
RG=13  
107.2  
-23.2  
IGR  
RG=13  
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C)  
Limit  
Typ.  
16.0  
8000  
-2.0  
-
Test Conditions  
Item  
Symbol  
Unit  
Min.  
Max.  
24.0  
VDS=5V, VGS =0V  
VDS=5V, IDS=8.0A  
VDS =5V, IDS=960mA  
GS=-960µA  
VDS=12V  
f=4.4 - 5.0 GHz  
IDS=7.0A (Typ.)  
Zs=ZL=50Ω  
-
Drain Current  
Transconductance  
Pinch-off Voltage  
Gate-Source Breakdown Voltage  
IDSS  
gm  
Vp  
VGSO  
P1dB  
A
mS  
-
-
-3.5  
-
-1.0  
-5.0  
V
V
I
Output Power at 1dB G.C.P .  
46  
46.5  
-
dBm  
Power Gain at 1dB G.C.P.  
Drain Current  
G1dB  
Idsr  
9.0  
-
10.0  
8.0  
-
dB  
A
10.0  
η
-
-
41  
-
-
add  
Power-Added Efficiency  
Gain Flatness  
%
dB  
G
1.2  
1.3  
100  
o
C/W  
Thermal Resistance  
Channel Temperature Rise  
CASE STYLE: IK  
Channel to Case  
12V X Idsr X Rth  
-
-
1.1  
-
R
Tch  
th  
o
C
G.C.P.:Gain Compression Point  
ESD  
Class Ⅲ  
2000V~  
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k)  
Edition 1.3  
September 2004  
1

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