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FLM3439-4F PDF预览

FLM3439-4F

更新时间: 2024-02-01 14:51:47
品牌 Logo 应用领域
EUDYNA 晶体晶体管放大器局域网
页数 文件大小 规格书
4页 275K
描述
C-Band Internally Matched FET

FLM3439-4F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Contact Manufacturer包装说明:FLANGE MOUNT, R-CDFM-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.27
其他特性:HIGH RELIABILITY外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:15 V
最大漏极电流 (ID):1.3 AFET 技术:JUNCTION
最高频带:C BANDJESD-30 代码:R-CDFM-F2
元件数量:1端子数量:2
工作模式:DEPLETION MODE封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:GALLIUM ARSENIDEBase Number Matches:1

FLM3439-4F 数据手册

 浏览型号FLM3439-4F的Datasheet PDF文件第2页浏览型号FLM3439-4F的Datasheet PDF文件第3页浏览型号FLM3439-4F的Datasheet PDF文件第4页 
FLM3439-4F  
C-Band Internally Matched FET  
FEATURES  
• High Output Power: P  
= 36.5dBm (Typ.)  
1dB  
• High Gain: G  
= 12.0dB (Typ.)  
1dB  
= 38% (Typ.)  
• High PAE: η  
• Low IM = -46dBc@Po = 25.5dBm  
add  
3
• Broad Band: 3.4 ~ 3.9GHz  
• Impedance Matched Zin/Zout = 50Ω  
• Hermetically Sealed Package  
DESCRIPTION  
The FLM3439-4F is a power GaAs FET that is internally matched for  
standard communication bands to provide optimum power and gain in a  
50 ohm system.  
Eudyna’s stringent Quality Assurance Program assures the highest  
reliability and consistent performance.  
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)  
Item  
Symbol  
Condition  
Unit  
Rating  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
15  
-5  
V
V
DS  
GS  
T = 25°C  
c
Total Power Dissipation  
Storage Temperature  
Channel Temperature  
P
25  
-65 to +175  
175  
W
°C  
°C  
T
T
stg  
T
ch  
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:  
1. The drain-source operating voltage (V ) should not exceed 10 volts.  
DS  
2. The forward and reverse gate currents should not exceed 16.0 and -2.2 mA respectively with  
gate resistance of 100.  
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)  
Limit  
Typ.  
Item  
Symbol  
Test Conditions  
Unit  
Min.  
Max.  
V
V
V
= 5V, V  
= 0V  
GS  
Saturated Drain Current  
Transconductance  
I
-
-
1950 2900  
mA  
DS  
DS  
DS  
DSS  
g
-
= 5V, I  
= 1100mA  
1000  
m
mS  
V
DS  
Pinch-off Voltage  
V
= 5V, I  
DS  
= 90mA  
-1.0  
-2.0 -3.5  
p
Gate Source Breakdown Voltage  
Output Power at 1dB G.C.P.  
Power Gain at 1dB G.C.P.  
Drain Current  
V
-5.0  
-
-
-
-
V
dBm  
dB  
I
= -90µA  
GSO  
GS  
P
35.5 36.5  
11.0 12.0  
1dB  
V
I
=10V,  
= 0.55 I  
DS  
G
1dB  
DS  
DSS (Typ.),  
I
f = 3.4 ~ 3.9 GHz,  
Z =Z = 50 ohm  
-
-
-
1100 1300  
mA  
%
dsr  
S
L
η
Power-added Efficiency  
Gain Flatness  
add  
38  
-
-
G  
0.6  
dB  
f = 3.9 GHz, f = 10 MHz  
3rd Order Intermodulation  
Distortion  
2-Tone Test  
-44  
-46  
-
dBc  
IM  
R
3
P
= 25.5dBm S.C.L.  
out  
Thermal Resistance  
Channel to Case  
-
-
5.0  
-
6.0  
80  
°C/W  
°C  
th  
T  
Channel Temperature Rise  
10V x I  
x R  
th  
ch  
dsr  
CASE STYLE: IB  
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level  
Edition 1.1  
August 2004  
1

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