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FLM3439-25F PDF预览

FLM3439-25F

更新时间: 2024-02-02 13:16:07
品牌 Logo 应用领域
EUDYNA 晶体晶体管放大器局域网
页数 文件大小 规格书
4页 298K
描述
C-Band Internally Matched FET

FLM3439-25F 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84其他特性:HIGH RELIABILITY
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:15 V最大漏极电流 (ID):7.6 A
FET 技术:JUNCTION最高频带:C BAND
JESD-30 代码:R-CDFM-F2元件数量:1
端子数量:2工作模式:DEPLETION MODE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:GALLIUM ARSENIDE
Base Number Matches:1

FLM3439-25F 数据手册

 浏览型号FLM3439-25F的Datasheet PDF文件第2页浏览型号FLM3439-25F的Datasheet PDF文件第3页浏览型号FLM3439-25F的Datasheet PDF文件第4页 
FLM3439-25F  
C-Band Internally Matched FET  
FEATURES  
• High Output Power: P  
= 44.5dBm (Typ.)  
1dB  
• High Gain: G  
= 10.5dB (Typ.)  
1dB  
= 41% (Typ.)  
• High PAE: η  
• Low IM = -46dBc@Po = 33.5dBm  
add  
3
• Broad Band: 3.4 ~ 3.9GHz  
• Impedance Matched Zin/Zout = 50Ω  
• Hermetically Sealed Package  
DESCRIPTION  
The FLM3439-25F is a power GaAs FET that is internally matched for  
standard communication bands to provide optimum power and gain in a  
50 ohm system.  
Eudyna’s stringent Quality Assurance Program assures the highest  
reliability and consistent performance.  
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)  
Item  
Symbol  
Condition  
Unit  
Rating  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
15  
-5  
V
V
DS  
GS  
T = 25°C  
c
Total Power Dissipation  
Storage Temperature  
Channel Temperature  
P
93.7  
-65 to +175  
175  
W
°C  
°C  
T
T
stg  
T
ch  
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:  
1. The drain-source operating voltage (V ) should not exceed 10 volts.  
DS  
2. The forward and reverse gate currents should not exceed 64.0 and -11.2 mA respectively with  
gate resistance of 25.  
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)  
Limit  
Typ.  
Item  
Symbol  
Test Conditions  
Unit  
Min.  
Max.  
V
V
V
= 5V, V  
= 0V  
GS  
Saturated Drain Current  
Transconductance  
I
-
-
11.6 17.4  
A
DS  
DS  
DS  
DSS  
g
-
= 5V, I  
= 6.8A  
5800  
m
mS  
V
DS  
Pinch-off Voltage  
V
= 5V, I  
DS  
= 600mA  
-1.0  
-2.0 -3.5  
p
Gate Source Breakdown Voltage  
Output Power at 1dB G.C.P.  
Power Gain at 1dB G.C.P.  
Drain Current  
V
-5.0  
-
-
-
-
V
dBm  
dB  
I
= -600µA  
GSO  
GS  
P
43.5 44.5  
1dB  
V
I
=10V,  
= 0.55 I  
G
9.5  
10.5  
DS  
1dB  
DS  
DSS (Typ.),  
I
-
-
-
6200 7600  
mA  
%
dsr  
f = 3.4 ~ 3.9 GHz,  
Z =Z = 50 ohm  
η
Power-added Efficiency  
Gain Flatness  
add  
41  
-
-
S
L
G  
0.6  
dB  
f = 3.9 GHz, f = 10 MHz  
3rd Order Intermodulation  
Distortion  
2-Tone Test  
-44  
-46  
-
dBc  
IM  
R
3
P
= 33.5dBm S.C.L.  
out  
Thermal Resistance  
Channel to Case  
-
-
1.4  
-
1.6  
°C/W  
°C  
th  
T  
Channel Temperature Rise  
10V x I  
x R  
th  
100  
ch  
dsr  
CASE STYLE: IK  
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level  
Edition 1.1  
August 2004  
1

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