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FLM1414-4F PDF预览

FLM1414-4F

更新时间: 2024-02-18 02:30:16
品牌 Logo 应用领域
EUDYNA 晶体晶体管放大器局域网
页数 文件大小 规格书
4页 304K
描述
Internally Matched Power GaAs FET

FLM1414-4F 技术参数

生命周期:Transferred包装说明:FLANGE MOUNT, R-CDFM-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.15
其他特性:HIGH RELIABILITY外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:15 V
FET 技术:JUNCTION最高频带:KU BAND
JESD-30 代码:R-CDFM-F2元件数量:1
端子数量:2工作模式:DEPLETION MODE
最高工作温度:175 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL功耗环境最大值:25 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:GALLIUM ARSENIDEBase Number Matches:1

FLM1414-4F 数据手册

 浏览型号FLM1414-4F的Datasheet PDF文件第2页浏览型号FLM1414-4F的Datasheet PDF文件第3页浏览型号FLM1414-4F的Datasheet PDF文件第4页 
FLM1414-4F  
Internally Matched Power GaAs FET  
FEATURES  
• High Output Power: P  
= 36.0dBm (Typ.)  
1dB  
• High Gain: G  
= 6.0dB (Typ.)  
1dB  
= 27% (Typ.)  
• High PAE: η  
add  
• Low IM = -46dBc@Po = 25.5dBm (Typ.)  
3
• Broad Band: 14.0 ~ 14.5GHz  
• Impedance Matched Zin/Zout = 50Ω  
• Hermetically Sealed  
DESCRIPTION  
The FLM1414-4F is a power GaAs FET that is internally matched for  
standard communication bands to provide optimum power and gain in a  
50 ohm system.  
Eudyna’s stringent Quality Assurance Program assures the highest  
reliability and consistent performance.  
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)  
Item  
Symbol  
Condition  
Unit  
Rating  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
15  
-5  
V
V
DS  
GS  
T = 25°C  
c
Total Power Dissipation  
Storage Temperature  
Channel Temperature  
P
25  
-65 to +175  
175  
W
°C  
°C  
T
T
stg  
T
ch  
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:  
1. The drain-source operating voltage (V ) should not exceed 10 volts.  
DS  
2. The forward and reverse gate currents should not exceed 16.0 and -2.2 mA respectively with  
gate resistance of 100.  
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)  
Limit  
Typ.  
Item  
Symbol  
Test Conditions  
Unit  
Min.  
Max.  
V
V
V
I
= 5V, V  
= 0V  
GS  
Saturated Drain Current  
Transconductance  
I
-
1700 2600  
mA  
mS  
V
DS  
DS  
DS  
DSS  
g
= 5V, I  
= 1100mA  
= 85mA  
-
1700  
-1.5  
-
-
m
DS  
Pinch-off Voltage  
V
= 5V, I  
DS  
-0.5  
-5.0  
-3.0  
p
Gate Source Breakdown Voltage  
Output Power at 1dB G.C.P.  
Power Gain at 1dB G.C.P.  
Drain Current  
V
GSO  
-
V
= -85µA  
GS  
P
35.5 36.0  
-
-
dBm  
dB  
mA  
%
1dB  
V
= 10V  
G
5.0  
6.0  
1100  
27  
DS  
1dB  
dsr  
f = 14.0 ~ 14.5 GHz  
= 0.65 I (Typ.)  
-
-
-
I
1300  
-
I
DS  
DSS  
Z = Z = 50Ω  
η
Power-Added Efficiency  
Gain Flatness  
S
L
add  
-
0.6  
dB  
G
f = 14.5GHz, f = 10MHz  
2-Tone Test  
Pout = 25.5dBm S.C.L.  
3rd Order Intermodulation  
Distortion  
IM  
R
-44  
-46  
-
dBc  
3
Thermal Resistance  
-
-
°C/W  
°C  
Channel to Case  
th  
5.0  
-
6.0  
80  
T  
Channel Temperature Rise  
CASE STYLE: IA  
10V x I  
x R  
th  
ch  
dsr  
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level  
Edition 1.2  
August 2004  
1

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