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FLM1213-8F PDF预览

FLM1213-8F

更新时间: 2024-01-30 19:28:03
品牌 Logo 应用领域
EUDYNA 晶体晶体管放大器局域网
页数 文件大小 规格书
4页 298K
描述
X, Ku-Band Internally Matched FET

FLM1213-8F 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Contact Manufacturer包装说明:FLANGE MOUNT, R-CDFM-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.16
Is Samacsys:N其他特性:HIGH RELIABILITY
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:15 V最大漏极电流 (ID):2.6 A
FET 技术:JUNCTION最高频带:KU BAND
JESD-30 代码:R-CDFM-F2元件数量:1
端子数量:2工作模式:DEPLETION MODE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:GALLIUM ARSENIDE
Base Number Matches:1

FLM1213-8F 数据手册

 浏览型号FLM1213-8F的Datasheet PDF文件第2页浏览型号FLM1213-8F的Datasheet PDF文件第3页浏览型号FLM1213-8F的Datasheet PDF文件第4页 
FLM1213-8F  
X, Ku-Band Internally Matched FET  
FEATURES  
• High Output Power: P  
= 39.0dBm (Typ.)  
1dB  
• High Gain: G  
= 6.5dB (Typ.)  
1dB  
= 28% (Typ.)  
• High PAE: η  
add  
• Low IM = -46dBc@Po = 28.5dBm  
3
• Broad Band: 12.7 ~ 13.2GHz  
• Impedance Matched Zin/Zout = 50Ω  
• Hermetically Sealed  
DESCRIPTION  
The FLM1213-8F is a power GaAs FET that is internally matched for  
standard communication bands to provide optimum power and gain  
in a 50 ohm system.  
Eudyna’s stringent Quality Assurance Program assures the highest  
reliability and consistent performance.  
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)  
Item  
Symbol  
Condition  
Unit  
Rating  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
15  
-5  
V
V
DS  
GS  
T = 25°C  
c
Total Power Dissipation  
Storage Temperature  
Channel Temperature  
P
42.8  
-65 to +175  
175  
W
°C  
°C  
T
T
stg  
T
ch  
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:  
1. The drain-source operating voltage (V ) should not exceed 10 volts.  
DS  
2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with  
gate resistance of 100.  
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)  
Limit  
Typ.  
Item  
Symbol  
Test Conditions  
Unit  
Min.  
Max.  
V
V
V
I
= 5V, V  
= 0V  
GS  
Saturated Drain Current  
Transconductance  
I
-
3400 5200  
mA  
mS  
V
DS  
DS  
DS  
DSS  
g
= 5V, I  
= 2200mA  
=170mA  
-
3400  
-1.5  
-
-
m
DS  
Pinch-off Voltage  
V
= 5V, I  
DS  
-0.5  
-5.0  
-3.0  
p
Gate Source Breakdown Voltage  
Output Power at 1dB G.C.P.  
Power Gain at 1dB G.C.P.  
Drain Current  
V
GSO  
-
V
= -170µA  
GS  
P
38.5 39.0  
-
-
dBm  
dB  
mA  
%
1dB  
V
= 10V  
G
5.5  
6.5  
2200  
28  
DS  
1dB  
dsr  
f = 12.7 ~ 13.2 GHz  
= 0.65 I (Typ.)  
-
-
-
I
2600  
-
I
DS  
DSS  
Z = Z = 50Ω  
η
Power-Added Efficiency  
Gain Flatness  
S
L
add  
-
0.6  
dB  
G
f = 13.2GHz, f = 10MHz  
2-Tone Test  
Pout = 28.5dBm S.C.L.  
3rd Order Intermodulation  
Distortion  
IM  
R
-44  
-46  
-
dBc  
3
Thermal Resistance  
-
-
°C/W  
°C  
Channel to Case  
th  
3.0  
-
3.5  
80  
T  
Channel Temperature Rise  
CASE STYLE: IA  
10V x I  
x R  
th  
ch  
dsr  
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level  
Edition 1.4  
August 2004  
1

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