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FLM0910-3F PDF预览

FLM0910-3F

更新时间: 2024-02-02 11:55:57
品牌 Logo 应用领域
EUDYNA 晶体晶体管放大器局域网
页数 文件大小 规格书
4页 311K
描述
X, Ku-Band Internally Matched FET

FLM0910-3F 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Contact Manufacturer包装说明:FLANGE MOUNT, R-CDFM-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.12
Is Samacsys:N其他特性:HIGH RELIABILITY
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:15 V最大漏极电流 (ID):1.1 A
FET 技术:JUNCTION最高频带:KU BAND
JESD-30 代码:R-CDFM-F2元件数量:1
端子数量:2工作模式:DEPLETION MODE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:GALLIUM ARSENIDE
Base Number Matches:1

FLM0910-3F 数据手册

 浏览型号FLM0910-3F的Datasheet PDF文件第2页浏览型号FLM0910-3F的Datasheet PDF文件第3页浏览型号FLM0910-3F的Datasheet PDF文件第4页 
FLM0910-3F  
X, Ku-Band Internally Matched FET  
FEATURES  
• High Output Power: P  
= 35.0dBm (Typ.)  
1dB  
• High Gain: G  
= 7.5dB (Typ.)  
1dB  
= 29% (Typ.)  
• High PAE: η  
• Low IM = -46dBc@Po = 24.0dBm  
add  
3
• Broad Band: 9.5 ~ 10.5GHz  
• Impedance Matched Zin/Zout = 50Ω  
DESCRIPTION  
The FLM0910-3F is a power GaAs FET that is internally matched for  
standard communication bands to provide optimum power and gain in a  
50 ohm system.  
Eudyna’s stringent Quality Assurance Program assures the highest  
reliability and consistent performance.  
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)  
Item  
Symbol  
Condition  
Unit  
Rating  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
15  
-5  
V
V
DS  
GS  
T = 25°C  
c
Total Power Dissipation  
Storage Temperature  
Channel Temperature  
P
25.0  
-65 to +175  
175  
W
°C  
°C  
T
T
stg  
T
ch  
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:  
1. The drain-source operating voltage (V ) should not exceed 10 volts.  
DS  
2. The forward and reverse gate currents should not exceed 13.0 and -1.4 mA respectively with  
gate resistance of 100.  
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)  
Limit  
Typ.  
Item  
Symbol  
Test Conditions  
Unit  
Min.  
Max.  
V
V
= 5V, V  
= 0V  
GS  
Saturated Drain Current  
Transconductance  
I
-
1400 2100  
mA  
mS  
V
DS  
DS  
DSS  
g
-
= 5V, I  
= 900mA  
-
1300  
m
DS  
Pinch-off Voltage  
V
V
I
= 5V, I  
DS  
= 70mA  
-0.5  
-5.0  
-1.5 -3.0  
p
DS  
Gate Source Breakdown Voltage  
Output Power at 1dB G.C.P.  
V
-
-
-
-
V
= -70µA  
GSO  
GS  
P
34.0 35.0  
dBm  
1dB  
Power Gain at 1dB G.C.P.  
Drain Current  
V
=10V,  
G
6.5  
7.5  
dB  
mA  
%
DS  
1dB  
I
= 0.6 I  
DS  
DSS (Typ.),  
I
-
-
-
900 1100  
dsr  
f =9.5 ~10.5 GHz,  
Z =Z = 50 ohm  
η
Power-added Efficiency  
Gain Flatness  
add  
29  
-
-
S
L
G  
0.6  
dB  
f = 10.5 GHz, f = 10 MHz  
3rd Order Intermodulation  
Distortion  
2-Tone Test  
IM  
3
-44  
-46  
-
dBc  
P
= 24.0dBm S.C.L.  
out  
R
Thermal Resistance  
Channel Temperature Rise  
CASE STYLE: IA  
Channel to Case  
-
-
5.0  
-
6.0  
66  
°C/W  
°C  
th  
T  
10V x I  
x R  
th  
ch  
dsr  
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level  
Edition 1.2  
August 2004  
1

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