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FLM0910-25F PDF预览

FLM0910-25F

更新时间: 2024-01-16 08:13:56
品牌 Logo 应用领域
EUDYNA 晶体晶体管局域网
页数 文件大小 规格书
5页 178K
描述
X-Band Internally Matched FET

FLM0910-25F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:FLANGE MOUNT, R-CDFM-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.1
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:10 V最大漏极电流 (ID):7.2 A
FET 技术:JUNCTION最高频带:X BAND
JESD-30 代码:R-CDFM-F2元件数量:1
端子数量:2工作模式:DEPLETION MODE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:GALLIUM ARSENIDE
Base Number Matches:1

FLM0910-25F 数据手册

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FLM0910-25F  
X-Band Internally Matched FET  
FEATURES  
High Output Power: P1dB=44dBm(Typ.)  
High Gain: G1dB=7.0dB(Typ.)  
High PAE: ηadd=30%(Typ.)  
Broad Band: 9.510.5GHz  
Impedance Matched Zin/Zout = 50Ω  
Hermetically Sealed Package  
DESCRIPTION  
The FLM0910-25F is a power GaAs FET that is internally matched  
for standard communication bands to provide optimum power and  
gain in a 50Ω system.  
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25)  
Item  
Symbol  
Rating  
Unit  
Drain-Source Voltage  
VDS  
15  
V
V
Gate-Source Voltage  
Total Power Dissipation  
Storage Temperature  
Channel Temperature  
VGS  
PT  
-5  
93.7  
W
Tstg  
-65 to +175  
175  
Tch  
Recommended Operating Condition(Case Temperature Tc=25)  
Item  
Symbol  
VDS  
Unit  
Condition  
Limit  
10  
DC Input Voltage  
Forward Gate Current  
Reverse Gate Current  
V
mA  
mA  
RG=25Ω  
RG=25Ω  
IGF  
64  
-11.2  
IGR  
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25)  
Limit  
Typ.  
10.8  
10000  
-1.5  
-
Test Conditions  
Item  
Symbol  
Unit  
Max.  
16.2  
-
-3.0  
-
Min.  
VDS=5V , VGS=0V  
-
A
mS  
IDSS  
gm  
Vp  
Drain Current  
Transconductance  
Pinch-off Voltage  
Gate-Source Breakdown Voltage  
-
VDS=5V , IDS=6.92A  
VDS=5V , IDS=500mA  
IGS=-500uA  
-0.5  
-5.0  
43  
V
V
VGSO  
P1dB  
Output Power at 1dB G.C.P.  
44  
-
dBm  
dB  
VDS=10V  
G1dB  
Idsr  
Power Gain at 1dB G.C.P.  
Drain Current  
6.0  
7.0  
-
f=9.5 - 10.5 GHz  
IDS=0.6Idss  
Zs=ZL=50Ω  
-
-
-
-
-
6.5  
30  
-
7.2  
-
A
Power-added Efficiency  
Gain Flatness  
ηadd  
ΔG  
%
dB  
±0.6  
1.6  
100  
1.4  
-
Thermal Resistance  
Channel Temperature Rise  
CASE STYLE: IK  
/W  
Channel to Case  
10V X Idsr X Rth  
Rth  
ΔTch  
G.C.P.:Gain Compression Point  
ESD  
Class Ⅲ  
2000Vꢀ~  
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)  
Edition 1.3  
September 2004  
1

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