FLM0910-15F
X-Band Internally Matched FET
FEATURES
・High Output Power: P1dB=42.0dBm(Typ.)
・High Gain: G1dB=7.5dB(Typ.)
・High PAE: hadd=32%(Typ.)
・Broad Band: 9.5~10.5GHz
・Impedance Matched Zin/Zout = 50W
・Hermetically Sealed Package
DESCRIPTION
The FLM0910-15F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50W system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25oC)
Symbol
VDS
VGS
PT
Unit
V
Item
Rating
15
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
-5
V
57.7
W
oC
oC
Tstg
-65 to +175
175
Tch
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25oC)
Item
Symbol
Unit
V
Condition
Lim it
10
VDS
DC Input Voltage
Forw ard Gate Current
Reverse Gate Current
≦
RG=50 ohm
RG=50 ohm
16.7
IGF
mA
mA
≦
-3.62
IGR
≧
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC)
Lim it
Typ.
7.2
4500
-1.5
-
Item
Symbol
Condition
Unit
Min.
Max.
10.8
-
IDSS
gm
VDS=5V , VGS=0V
VDS=5V , IDS=3.5A
VDS=5V , IDS=300mA
IGS=-300uA
-
A
mS
V
Drain Current
-
Trans conductance
Vp
-0.5
-3.0
-
Pinch-off Voltage
VGSO
P1dB
G1dB
Idsr
-5.0
V
Gate-Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
41.0
42.0
7.5
4.0
32
-
dBm
dB
A
VDS=10V
IDS=0.5IDSS (typ.)
6.5
-
-
-
-
-
-
5.0
-
f= 9.5 ~ 10.5 GHz
Zs=ZL=50 ohm
Nadd
%
Power-added Efficiency
Gain Flatness
G
-
1.2
2.6
100
dB
oC/W
oC
D
Rth
Channel to Case
10V x Idsr X Rth
2.3
-
Therm al Resistance
Channel Temperature Rise
Tch
D
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Lev el
CASE STYLE : IB
ESD
Class III
2000V ~
ꢀ
Edition 1.1
May 2005
1