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FLL400IK-2C PDF预览

FLL400IK-2C

更新时间: 2024-02-01 04:56:56
品牌 Logo 应用领域
EUDYNA /
页数 文件大小 规格书
3页 61K
描述
High Voltage - High Power GaAs FET

FLL400IK-2C 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-CDFM-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.4
其他特性:HIGH RELIABILITY外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:15 V
FET 技术:JUNCTION最高频带:S BAND
JESD-30 代码:R-CDFM-F2元件数量:1
端子数量:2工作模式:DEPLETION MODE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:GALLIUM ARSENIDE

FLL400IK-2C 数据手册

 浏览型号FLL400IK-2C的Datasheet PDF文件第2页浏览型号FLL400IK-2C的Datasheet PDF文件第3页 
FLL400IK-2C  
High Voltage - High Power GaAs FET  
FEATURES  
High Output Power: P1dB=46.0dBm(Typ.)  
High Gain: G1dB=13.0dB(Typ.)  
High PAE: hadd=45%(Typ.)  
Broad Band: 2.11~2.17GHz  
Hermetically Sealed Package  
DESCRIPTION  
The FLL400IK-2C is a 40 Watt GaAs FET that is specially suited  
for use in W-CDMA base station amplifier as long term reliability.  
Fujitsu’s stringent Quality Assurance Program assures the highest  
reliability and consistent performance.  
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25oC)  
Item  
Symbol  
VDS  
VGS  
PTot  
Unit  
V
V
Rating  
Drain-Source Voltage  
Gate-Source Voltage  
Total Power Dissipation  
Storage Temperature  
Channel Temperature  
15  
-5  
100  
W
stg  
T
-65 to +175  
175  
oC  
oC  
Tch  
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25oC)  
Item  
Symbol  
Condition  
Unit  
Limit  
12  
<85  
>-25  
DC Input Voltage  
Forward Gate Current  
Reverse Gate Current  
VDS  
IGF  
IGR  
V
mA  
mA  
oC  
W
RG=5  
W
RG=5  
Operating channel temperature  
Tch  
145  
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC)  
Limit  
Item  
Symbol  
Condition  
Unit  
Min. Typ. Max.  
-0.1 -0.3 -0.5  
VDS=5V,IDS=110mA  
IGS=-1.1mA  
Pinch-off Voltage  
Vp  
V
V
Gate-Source Breakdown Voltage  
Output Power at 1dB G.C.P.  
Power Gain at 1dB G.C.P.  
Drain Current  
VGSO  
P1dB  
G1dB  
Idsr  
-5.0  
-
-
-
45.0 46.0  
12.0 13.0  
dBm  
dB  
A
V DD=12V  
-
f=2.17GHz  
IDS(DC)=1.5A  
Pin=35dBm  
-
-
-
6.7  
45.0  
1.3  
8.7  
-
h
Power-added Efficiency  
Thermal Resistance  
add  
%
oC/W  
Rth  
1.5  
CASE STYLE: IK  
ESD  
Class III  
2000 V~  
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kW)  
Edition 1.2  
September 2004  
1

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