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FLL300IL-2 PDF预览

FLL300IL-2

更新时间: 2024-01-14 05:53:18
品牌 Logo 应用领域
EUDYNA 晶体晶体管放大器局域网
页数 文件大小 规格书
6页 124K
描述
L-Band Medium & High Power GaAs FET

FLL300IL-2 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Contact Manufacturer包装说明:FLANGE MOUNT, R-CDFM-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.15
其他特性:HIGH RELIABILITY外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:15 V
最大漏极电流 (ID):8 AFET 技术:JUNCTION
最高频带:L BANDJESD-30 代码:R-CDFM-F2
元件数量:1端子数量:2
工作模式:DEPLETION MODE封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:GALLIUM ARSENIDEBase Number Matches:1

FLL300IL-2 数据手册

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FLL300IL-1, FLL300IL-2, FLL300IL-3  
L-Band Medium & High Power GaAs FET  
FEATURES  
• High Output Power: P  
= 44.5dBm (Typ.)  
1dB  
= 12.0dB (Typ.)@1.8GHz (FLL300IL-2)  
• High Gain: G  
1dB  
= 44% (Typ.)  
• High PAE: η  
add  
• Proven Reliability  
• Hermetically Sealed Package  
DESCRIPTION  
The FLL300IL-1, FLL300IL-2, FLL300IL-3 are Power GaAs FETs that are  
specifically designed to provide high power at L-Band frequencies with  
gain, linearity and efficiency superior to that of silicon devices. The  
performance in multitone environments for Class AB operation make  
them ideally suited for base station applications.  
Fujitsu’s stringent Quality Assurance Program assures the highest  
reliability and consistent performance.  
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)  
Item  
Symbol  
Condition  
Unit  
Rating  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
15  
-5  
V
V
DS  
GS  
T = 25°C  
c
Total Power Dissipation  
Storage Temperature  
Channel Temperature  
P
100  
-65 to +175  
175  
W
°C  
°C  
T
T
stg  
T
ch  
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:  
1. The drain-source operating voltage (V ) should not exceed 10 volts.  
DS  
2. The forward and reverse gate currents should not exceed 80.4 and -17.4 mA respectively with  
gate resistance of 25.  
3. The operating channel temperature (T ) should not exceed 145°C.  
ch  
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)  
Limit  
Typ.  
Item  
Symbol  
Test Conditions*  
Unit  
Min.  
Max.  
V
DS  
V
DS  
V
DS  
= 5V, V  
= 0V  
GS  
Saturated Drain Current  
Transconductance  
I
-
12  
16  
-
A
DSS  
g
= 5V, I  
= 7200mA  
6000  
m
-
mS  
V
DS  
Pinch-off Voltage  
V
= 5V, I  
DS  
= 720mA  
-1.0 -2.0 -3.5  
p
Gate Source Breakdown Voltage V  
-
-
-
I
= -720µA  
-5  
V
GSO  
GS  
FLL300IL-1  
f=900MHz  
f=1.8GHz  
f=2.6GHz  
f=900MHz  
Output Power  
at 1dB G.C.P.  
FLL300IL-2  
FLL300IL-3  
FLL300IL-1  
FLL300IL-2  
P
43.0 44.5  
dBm  
1dB  
V
I
= 10V  
DS  
= 0.5 I  
DS  
DSS  
-
-
11.0 13.0  
10.0 12.0  
dB  
dB  
(Typ.)  
Power Gain  
at 1dB G.C.P.  
f=1.8GHz  
f=2.6GHz  
G
1dB  
FLL300IL-3  
-
8.0  
-
10.0  
6.0  
dB  
A
I
Drain Current  
8.0  
-
V
I
= 10V  
dsr  
DS  
= 0.5 I  
DS  
DSS (Typ.)  
η
Power added Efficiency  
Thermal Resistance  
-
-
-
44  
1.1  
-
%
°C/W  
°C  
add  
R
Channel to Case  
(10V x I r - P  
1.5  
80  
th  
T  
+ P x R  
in) th  
Channel Temperature Rise  
ds  
out  
ch  
G.C.P.: Gain Compression Point  
CASE STYLE: IL  
* Under fixed VGS bias condition  
Edition 1.2  
July 1999  
1

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