是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Contact Manufacturer | 包装说明: | FLANGE MOUNT, R-CDFM-F2 |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.15 |
其他特性: | HIGH RELIABILITY | 外壳连接: | SOURCE |
配置: | SINGLE | 最小漏源击穿电压: | 15 V |
最大漏极电流 (ID): | 8 A | FET 技术: | JUNCTION |
最高频带: | L BAND | JESD-30 代码: | R-CDFM-F2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | DEPLETION MODE | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | GALLIUM ARSENIDE | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
FLL300IL-3 | EUDYNA | L-Band Medium & High Power GaAs FET |
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|
FLL300IP-2 | FUJITSU | RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction |
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|
FLL300IP-4 | FUJITSU | RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction |
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|
FLL310IQ-3 | FUJITSU | RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction |
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|
FLL310IQ-3A | EUDYNA | High Voltage - High Power GaAs FET |
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|
FLL351ME | FUJITSU | L-band medium & high power gaas FTEs |
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